X-On Electronics has gained recognition as a prominent supplier of RSQ045N03FRATR MOSFETs across the USA, India, Europe, Australia, and various other global locations. RSQ045N03FRATR MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

RSQ045N03FRATR ROHM

RSQ045N03FRATR electronic component of ROHM
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Part No.RSQ045N03FRATR
Manufacturer: ROHM
Category: MOSFETs
Description: MOSFET, AEC-Q101, N-CH, 30V, 4.5A, TSMT6
Datasheet: RSQ045N03FRATR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
5: USD 0.5599 ea
Line Total: USD 2.8 
Availability - 0
MOQ: 5  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 5
Multiples : 1
5 : USD 0.5599
10 : USD 0.442
100 : USD 0.3319
500 : USD 0.2821
1000 : USD 0.2305
5000 : USD 0.2067

   
Manufacturer
Product Category
Transistor Polarity
Brand
Continuous Drain Current Id
Drain Source Voltage Vds
On Resistance Rdson
Rdson Test Voltage Vgs
Threshold Voltage Vgs
Power Dissipation Pd
Transistor Case Style
No. Of Pins
Operating Temperature Max
Automotive Qualification Standard
Msl
Svhc
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We are delighted to provide the RSQ045N03FRATR from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RSQ045N03FRATR and other electronic components in the MOSFETs category and beyond.

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RSQ045N03FRA Nch 30V 4.5A Power MOSFET Datasheet AEC-Q101 Qualified lOutline (6) V 30V DSS TSMT6 (5) (4) R (Max.) 38mW DS(on) I 4.5A (1) D (2) P 1.25W D (3) lFeatures lInner circuit 1) Low on - resistance. (1) Drain (2) Drain 2) Built-in G-S Protection Diode. (3) Gate (4) Source 3) Small Surface Mount Package (TSMT6). (5) Drain (6) Drain 4) Pb-free lead plating RoHS compliant *1 ESD PROTECTION DIODE *2 BODY DIODE lPackaging specifications Packaging Taping Reel size (mm) 180 lApplication Tape width (mm) 8 DC/DC converters Type Basic ordering unit (pcs) 3,000 Taping code TR Marking QL lAbsolute maximum ratings(T = 25C) a Parameter Symbol Value Unit Drain - Source voltage V 30 V DSS *1 Continuous drain current I 4.5 A D *2 Pulsed drain current A I 18 D,pulse V Gate - Source voltage 20 V GSS *3 P 1.25 W D Power dissipation *4 0.6 W P D T Junction temperature 150 C j T Range of storage temperature -55 to +150 C stg www.rohm.com 2012 ROHM Co., Ltd. All rights reserved. 2012.10 - Rev.B 1/11Data Sheet RSQ045N03FRA lThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *3 R - - 100 C/W thJA Thermal resistance, junction - ambient *4 R - - 208 C/W thJA lElectrical characteristics(T = 25C) ,unless otherwise specified a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 30 - - V (BR)DSS GS D voltage V I =1mA Breakdown voltage (BR)DSS D - 26 - mV/C temperature coefficient T referenced to 25C j I V = 30V, V = 0V Zero gate voltage drain current - - 1 mA DSS DS GS Gate - Source leakage current I V = 20V, V = 0V - - 10 mA GSS GS DS V V = 10V, I = 1mA Gate threshold voltage 1.0 - 2.5 V GS (th) DS D V I =1mA Gate threshold voltage (GS)th D - -2.8 - mV/C temperature coefficient T referenced to 25C j V =10V, I =4.5A - 27 38 GS D V =4.5V, I =4.5A - 36 51 GS D Static drain - source *5 R m W DS(on) on - state resistance V =4.0V, I =4.5A - 40 56 GS D V =10V, I =4.5A, T =125C - 50 70 GS D j R Gate input resistannce f = 1MHz, open drain - 6 - W G *5 Transconductance V =10V, I =4.5A 3.5 7.0 - S g DS D fs *1 Limited only by maximum temperature allowed. *2 Pw 10ms, Duty cycle 1% *3 Mounted on a ceramic board (30300.8mm) *4 Mounted on a FR4 (15200.8mm) *5 Pulsed www.rohm.com 2012 ROHM Co., Ltd. All rights reserved. 2012.10 - Rev.B 2/11

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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