RSQ035P03FRARSQ035P03 Transistor AEC-Q101 Qualified 4V Drive Pch MOS FET RSQ035P03FRA RSQ035P03 z Structure z External dimensions (Unit : mm) Silicon P-channel MOSFET TSMT6 1.0MAX 2.9 0.85 1.9 z Features 0.95 0.95 0.7 (6) (5) (4) 1) Low On-resistance.(65m at 4.5V) 2) High Power Package. 0~0.1 (1) (2) (3) 3) High speed switching. 1pin mark 4) Low voltage drive. (4V) 0.16 0.4 Each lead has same dimensions Abbreviated symbol : TM z Applications DC-DC converter z Packaging specifications z Equivalent circuit Package Taping (6) (5) (4) Code TR Type Basic ordering unit 3000 (pieces) 2 RSQ035P03 RSQ035P03FRA 1 (1)DRAIN (2)DRAIN (3)GATE (1) (2) (3) (4)SOURCE 1 ESD PROTECTION DIODE (5)DRAIN 2 BODY DIODE (6)DRAIN z Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit Drainsource voltage VDSS 30 V Gatesource voltage VGSS 20 V Continuous ID 3.5 A Drain current 1 14 Pulsed IDP A Continuous IS 1 A Source current (Body diode) 1 Pulsed ISP 4 A 2 Total power dissipation PD 1.25 W Channel temperature Tch 150 C Tstg 55 to +150 C Range of Strage temperature 1 Pw10s, Duty cycle1% 2 Mounted on a ceramic board z Thermal resistance Parameter Symbol Limits Unit Channel to ambient Rth(ch-a) 100 C / W Mounted on a ceramic board. Rev.A 1/4 1.6 2.8 0.3~0.6RSQ035P03FRARSQ035P03 Transistor z Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS 10 A VGS=20V, VDS=0V V(BR)DSS 30 V mA, Drain-source breakdown voltage ID=1 , VGS=0V IDSS A Zero gate voltage drain current 1 VDS=30V, VGS=0V Gate threshold voltage VDS=10V, ID=1mA VGS(th) 1.0 2.5 V 45 ID=3.5A, VGS=10V 65 m 65 90 m ID=3.5A, VGS=4.5V Static drain-source on-state RDS(on) resistance 70 95 m ID=1.75A, VGS=4.0V Foward transfer admittance 2.0 S VDS=10V, ID=1.75A Yfs Input capacitance Ciss 780 pF VGS=0V VDS=10V, pF Output capacitance 180 Coss f=1MHz Reverse transfer capacitance pF Crss 130 Turn-on delay time td(on) 15 ns ID=1.75A tr 35 ns Rise time VDD 15V VGS=10V Turn-off delay time ns td(off) 45 RL=8.6 RG=10 tf Fall time ns 25 Total gate charge Qg 9.2 nC VDD 15V Qgs 2.2 nC Gate-source charge VGS=5V ID=3.5A Gate-drain charge Qgd 3.4 nC PULSED z Body diode characteristics (Source-drain) (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions VSD 1.2 V IS=1A, VGS=0V Forward voltage Rev.A 2/4