RSR010N10HZGTL ROHM

RSR010N10HZG Datasheet Nch 100V 1A Small Signal MOSFET llOutline SOT-346T V 100V DSS SC-96 R (Max.) 520m DS(on) TSMT3 I 1A D P 1.0W D llInner circuit llFeatures 1) Low on - resistance 2) Built-in G-S Protection Diode 3) Small Surface Mount Package (TSMT3) 4) Pb-free lead plating RoHS compliant 5) AEC-Q101 Qualified llPackaging specifications Embossed Packing Tape Reel size (mm) 180 llApplication Tape width (mm) 8 Type DC/DC converters Basic ordering unit (pcs) 3000 Taping code TL Marking ZJ llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit V Drain - Source voltage 100 V DSS Continuous drain current I 1 A D *1 I Pulsed drain current 4 A DP V Gate - Source voltage 20 V GSS *2 Avalanche current, single pulse I 1.0 A AS *2 E Avalanche energy, single pulse 0.7 mJ AS *3 P 1.0 W D Power dissipation *4 P 0.7 W D Junction temperature T 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 2018 ROHM Co., Ltd. All rights reserved. 1/11 20180413 - Rev.001 RSR010N10HZG Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *3 R - - 125 /W thJA Thermal resistance, junction - ambient *4 R - - 178 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 100 - - V (BR)DSS GS D voltage V I = 1mA (BR)DSS D Breakdown voltage - 116.9 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = 100V, V = 0V - - 1 A DSS DS GS drain current I V = 20V, V = 0V Gate - Source leakage current - - 10 A GSS GS DS V Gate threshold voltage V = 10V, I = 1mA 1.0 - 2.5 V GS(th) DS D V I = 1mA GS(th) D Gate threshold voltage - -3.6 - mV/ temperature coefficient T referenced to 25 j V = 10V, I = 1A - 370 520 GS D Static drain - source *5 R V = 4.5V, I = 1A - 400 560 m DS(on) GS D on - state resistance V = 4.0V, I = 1A - 410 580 GS D R Gate resistance f = 1MHz, open drain - 10 - G Forward Transfer *5 Y V = 10V, I = 1A 1.0 3.1 - S fs DS D Admittance *1 Pw 10s, Duty cycle 1% *2 L 1.0mH, V = 50V, R = 25, Starting T = 25 Fig.3-1,3-2 DD G j *3 Mounted on a ceramic board (30300.8mm) *4 Mounted on a FR4 (25250.8mm) *5 Pulsed www.rohm.com 2/11 20180413 - Rev.001 2018 ROHM Co., Ltd. All rights reserved.