X-On Electronics has gained recognition as a prominent supplier of RSR020P05FRATL MOSFETs across the USA, India, Europe, Australia, and various other global locations. RSR020P05FRATL MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

RSR020P05FRATL ROHM

RSR020P05FRATL electronic component of ROHM
RSR020P05FRATL ROHM
RSR020P05FRATL MOSFETs
RSR020P05FRATL  Semiconductors

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See Product Specifications
Part No. RSR020P05FRATL
Manufacturer: ROHM
Category: MOSFETs
Description: ROHM Semiconductor MOSFET TRANS MOSFET P-CH 3PIN AUTO GRADE
Datasheet: RSR020P05FRATL Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 3000
Multiples : 3000
3000 : USD 0.6788
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 0.6547
10 : USD 0.5519
100 : USD 0.4576
500 : USD 0.4108
1000 : USD 0.3783
5000 : USD 0.3584
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 0.3359
10 : USD 0.2824
30 : USD 0.2595
100 : USD 0.2308
500 : USD 0.1896
1000 : USD 0.1821
3000 : USD 0.1801
6000 : USD 0.1789
N/A

Obsolete
0
MOQ : 3000
Multiples : 3000
3000 : USD 0.3346
6000 : USD 0.3324
9000 : USD 0.3281
24000 : USD 0.3248
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Qualification
Series
Transistor Type
Brand
Factory Pack Quantity :
Configuration
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the RSR020P05FRATL from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RSR020P05FRATL and other electronic components in the MOSFETs category and beyond.

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RSR020P05FRA Datasheet Pch -45V -2A Small Signal MOSFET llOutline SOT-346T V -45V DSS SC-96 R (Max.) 190m DS(on) TSMT3 I 2.0A D P 1.0W D llInner circuit llFeatures 1) Low on - resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TSMT3). 4) Pb-free lead plating RoHS compliant 5) AEC-Q101 Qualified llPackaging specifications Embossed Packing Tape Reel size (mm) 180 llApplication Tape width (mm) 8 Type Switching Basic ordering unit (pcs) 3000 Taping code TL Marking ZH llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit Drain - Source voltage V -45 V DSS *1 I Continuous drain current 2.0 A D *2 I Pulsed drain current 8.0 A DP V Gate - Source voltage 20 V GSS *3 P 1.0 W D Power dissipation *4 P 0.54 W D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 1/11 2016 ROHM Co., Ltd. All rights reserved. 20160808 - Rev.001 RSR020P05FRA Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *3 R - - 125 /W thJA Thermal resistance, junction - ambient *4 R - - 232 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = -1mA -45 - - V (BR)DSS GS D voltage V I = -1mA (BR)DSS D Breakdown voltage - -50 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = -45V, V = 0V - - -1 A DSS DS GS drain current I V = 20V, V = 0V Gate - Source leakage current - - 10 A GSS GS DS V Gate threshold voltage V = -10V, I = -1mA -1.0 - -3.0 V GS(th) DS D V I = -1mA GS(th) D Gate threshold voltage - 3.3 - mV/ temperature coefficient T referenced to 25 j V = -10V, I = -2.0A - 130 190 GS D Static drain - source *5 R V = -4.5V, I = -2.0A - 180 260 m DS(on) GS D on - state resistance V = -4.0V, I = -2.0A - 200 280 GS D R Gate resistance f = 1MHz, open drain - 21 - G Forward Transfer *5 Y V = -10V, I = -2.0A 1.2 4.0 - S fs DS D Admittance *1 Limited only by maximum temperature allowed *2 Pw10s , Duty cycle 1% *3 Mounted on a ceramic board (30300.8mm) *4 Mounted on a FR4 (12200.8mm) *5 Pulsed www.rohm.com 2/11 20160808 - Rev.001 2016 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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