(5) ( ) 4 (8) (1) RSS065N03 Transistors Switching (30V, 6.5A) RSS065N03 z External dimensions (Unit : mm) z Features 1) Low on-resistance. ROHM:SOP8 2) Built-in G-S Protection Diode. 5.00.2 3) Small and Surface Mount Package (SOP8). z Applications 0.20.1 Power switching, DC / DC converter. 0.40.1 1.27 0.1 z Structure Each lead has same dimensions Silicon N-channel MOS FET z Absolute maximum ratings (Ta=25C) z Equivalent circuit Parameter Symbol Limits Unit (8) (7) (6) (5) (8) (7) (6) (5) Drain-source voltage VDSS 30 V Gate-source voltage VGSS 20 V Continuous ID 6.5 A Drain current 1 Pulsed IDP 26 A 2 (1) (2) (3) (4) Continuous IS 1.6 A Source current 1 (1)Source 1 (Body diode) Pulsed ISP 6.4 A (2)Source 2 Total power dissipatino P 2 W (3)Source D (4)Gate Channel temperature Tch 150 C (5)Drain (1) (2) (3) (4) (6)Drain Strage temperature Tstg 55 to +150 C (7)Drain 1 Pw10s, Duty cycle1% 1 ESD PROTECTION DIODE (8)Drain 2 BODY DIODE 2 Mounted on a ceramic board. A protection diode is included between the gate and the source terminals to protect the diode against static electricity when the product is in use. Use the protection circuit when the fixed voltages are exceeded. z Thermal resistance (Ta=25C) Parameter Symbol Limits Unit Channel to ambient Rth (ch-a) 62.5 C / W Mounted on a ceramic board. 1/3 6.00.3 1.50.1 3.90.15 0.15 Max.1.75 0.50.1RSS065N03 Transistors z Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS 10 AVGS=20V, VDS=0V Drain-source breakdown voltage V 30 VI =1mA, V =0V (BR) DSS D GS Zero gate voltage drain current IDSS 10 AVDS=30V, VGS=0V Gate threshold voltage VGS (th) 1.0 2.5 V VDS=10V, ID=1mA 19 26 I =6.5A, V =10V D GS Static drain-source on-starte RDS (on) 27 37 m ID=6.5A, VGS=4.5V resistance 30 42 ID=6.5A, VGS=4V Forward transfer admittance Yfs 4.0 SID=6.5A, VDS=10V Input capacitance C 430 pF V =10V iss DS Output capacitance Coss 155 pF VGS=0V Reverse transfer capacitance Crss 80 pF f=1MHz Tum-on delay time t 8 ns I =3.25A, V 15V d (on) D DD Rise time tr 8 ns VGS=10V Tum-off delay time td (off) 31 ns RL=4.62 Fall time tf 8 ns RGS=10 Total gate charge Q 6.1 nC V 15V g DD Gate-source charge Qgs 1.5 nC VGS=5V Gate-drain charge Qgd2.3 nC ID=6.5A Pulsed z Body diode characteristics (Source-Drain Characteristics) (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Forward voltage VSD 1.2 V IS=6.4A, VGS=0V Pulsed 2/3