X-On Electronics has gained recognition as a prominent supplier of ECH8309-TL-H MOSFETs across the USA, India, Europe, Australia, and various other global locations. ECH8309-TL-H MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

ECH8309-TL-H ON Semiconductor

Name: ECH8309-TL-H
Brand: ON Semiconductor
SKU: ECH8309TLH_ON_Semiconductor
Availability: InStock
Rating: 5 (11 reviews)

ECH8309-TL-H electronic component of ON Semiconductor

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See Product Specifications

Part No.	ECH8309-TL-H
Manufacturer:	ON Semiconductor
Category:	MOSFETs
Description:	ON Semiconductor MOSFET SWITCHING DEVICE
Datasheet:	ECH8309-TL-H Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 0.845 ea
Line Total: USD 0.84

Availability - 2676
Ship by Tue. 04 Mar to Thu. 06 Mar

MOQ: 1 Multiples: 1
Pack Size: 1

ECH8309-TL-H More Buying Options & Price Grid(s)

Please wait...

Availability Price Buy Price Quantity

82

Ship by Thu. 13 Mar to Tue. 18 Mar

MOQ : 1
Multiples : 1

1 : USD 1.1036
10 : USD 1.0817
30 : USD 0.9156
100 : USD 0.8123

2676

Ship by Tue. 04 Mar to Thu. 06 Mar

MOQ : 1
Multiples : 1

1 : USD 0.845
10 : USD 0.685
100 : USD 0.4334
500 : USD 0.3597
1000 : USD 0.3355
3000 : USD 0.3212
6000 : USD 0.308
9000 : USD 0.308
24000 : USD 0.2981

Specifications

Manufacturer

ON Semiconductor ON Semiconductor

Product Category

MOSFETs MOSFETs

RoHS - XON

Y Y

Id - Continuous Drain Current

- 9.5 A - 9.5 A

Vds - Drain-Source Breakdown Voltage

- 12 V - 12 V

Rds On - Drain-Source Resistance

16 mOhms 16 mOhms

Transistor Polarity

P - Channel P - Channel

Mounting Style

Smd/Smt Smd/Smt

Package / Case

ECH - 8 ECH - 8

Packaging

Reel Reel

Technology

Si Si

Number of Channels

1 Channel 1 Channel

Series

Ech8309 Ech8309

Brand

On Semiconductor On Semiconductor

Factory Pack Quantity :

3000 3000

Configuration

Single Single

Transistor Type

1 P - Channel 1 P - Channel

Cnhts

8541290000 8541290000

Hts Code

8541290095 8541290095

Mxhts

85412999 85412999

Product Type

Mosfet Mosfet

Subcategory

Mosfets Mosfets

Taric

8541290000 8541290000

Category

MOSFET MOSFET

Brand Category

ON Semiconductor ON Semiconductor

Notes:- Show Stocked Products With Similar Attributes.

ECH8309-TL-H Alternative Parts

We are delighted to provide the ECH8309-TL-H from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the ECH8309-TL-H and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

Ordering number : ENA1418B ECH8309 P-Channel Power MOSFET ECH8309 Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Drain-to-Source Breakdown Voltage V I =--1mA, V =0V --12 V (BR)DSS D GS Zero-Gate Voltage Drain Current I V =--12V, V =0V --10 A DSS DS GS Gate-to-Source Leakage Current I V =8V, V =0V 10 A GSS GS DS Cutoff Voltage V (off) V =--6V, I =--1mA --0.4 --1.3 V GS DS D Forward Transfer Admittance yfs V =--6V, I =--4.5A 9.6 16 S DS D R (on)1 I =--4.5A, V =--4.5V 12 16 m DS D GS Static Drain-to-Source On-State Resistance R (on)2 I =--2A, V =--2.5V 18 26 m DS D GS R (on)3 I =--1A, V =--1.8V 30 53 m DS D GS Input Capacitance Ciss 1780 pF Output Capacitance Coss V =--6V, f=1MHz 540 pF DS Reverse Transfer Capacitance Crss 390 pF Turn-ON Delay Time t (on) 22 ns d Rise Time t 110 ns r See speci ed Test Circuit. Turn-OFF Delay Time t (off) 157 ns d Fall Time t 123 ns f Total Gate Charge Qg 18 nC Gate-to-Source Charge Qgs V =--6V, V =--4.5V, I =--9.5A 2.8 nC DS GS D Gate-to-Drain Miller Charge Qgd 4.9 nC Diode Forward Voltage V I =--9.5A, V =0V --0.8 --1.2 V SD S GS Switching Time Test Circuit V = --6V V IN DD 0V --4.5V I = --4.5A D V IN R =1.3 L D V OUT PW=10s D.C.1% G ECH8309 P.G 50 S Ordering Information Device Package Shipping memo ECH8309-TL-H ECH8 3,000pcs./reel Pb Free and Halogen Free No. A1418-2/7

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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FS8
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ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
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onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild

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Availability	Price	Buy Price	Quantity
82 Ship by Thu. 13 Mar to Tue. 18 Mar MOQ : 1 Multiples : 1	1 : USD 1.1036 10 : USD 1.0817 30 : USD 0.9156 100 : USD 0.8123

2676 Ship by Tue. 04 Mar to Thu. 06 Mar MOQ : 1 Multiples : 1	1 : USD 0.845 10 : USD 0.685 100 : USD 0.4334 500 : USD 0.3597 1000 : USD 0.3355 3000 : USD 0.3212 6000 : USD 0.308 9000 : USD 0.308 24000 : USD 0.2981

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