Ordering number : ENA1778A ECH8667 P-Channel Power MOSFET ECH8667 Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Drain-to-Source Breakdown Voltage V I =--1mA, V =0V --30 V (BR)DSS D GS Zero-Gate Voltage Drain Current I V =--30V, V =0V --1 A DSS DS GS Gate-to-Source Leakage Current I V =16V, V =0V 10 A GSS GS DS Cutoff Voltage V (off) V =--10V, I =--1mA --1.2 --2.6 V GS DS D Forward Transfer Admittance yfs V =--10V, I =--2.5A 5.2 S DS D R (on)1 I =--2.5A, V =--10V 30 39 m DS D GS Static Drain-to-Source On-State Resistance R (on)2 I =--1.5A, V =--4.5V 55 77 m DS D GS R (on)3 I =--1.5A, V =--4V 58 82 m DS D GS Input Capacitance Ciss 600 pF Output Capacitance Coss V =--10V, f=1MHz 145 pF DS Reverse Transfer Capacitance Crss 110 pF Turn-ON Delay Time t (on) 7.2 ns d Rise Time t 23 ns r See speci ed Test Circuit. Turn-OFF Delay Time t (off) 63 ns d Fall Time t 42 ns f Total Gate Charge Qg 13 nC Gate-to-Source Charge Qgs V =--15V, V =--10V, I =--5.5A 1.8 nC DS GS D Gate-to-Drain Miller Charge Qgd 3.2 nC Diode Forward Voltage V I =--5.5A, V =0V --0.82 --1.2 V SD S GS Switching Time Test Circuit V V = --15V IN DD 0V --10V I = --2.5A D V IN R =6 L D V OUT PW=10s D.C.1% G ECH8667 P.G 50 S Ordering Information Device Package Shipping memo ECH8667-TL-H ECH8 3,000pcs./reel Pb Free and Halogen Free No. A1778-2/7