X-On Electronics has gained recognition as a prominent supplier of ECH8690-TL-H MOSFETs across the USA, India, Europe, Australia, and various other global locations. ECH8690-TL-H MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

ECH8690-TL-H ON Semiconductor

ECH8690-TL-H electronic component of ON Semiconductor
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See Product Specifications
Part No.ECH8690-TL-H
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: MOSFET PCH+NCH 4V DRIVE SERIES
Datasheet: ECH8690-TL-H Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
10: USD 0.7736 ea
Line Total: USD 7.74 
Availability - 17
Ship by Wed. 20 Nov to Tue. 26 Nov
MOQ: 10  Multiples: 1
Pack Size: 1
Availability Price Quantity
1
Ship by Wed. 27 Nov to Mon. 02 Dec
MOQ : 1
Multiples : 1
1 : USD 1.5321
10 : USD 1.3605
30 : USD 1.2584
100 : USD 1.1091
500 : USD 1.0617
1000 : USD 1.0403

17
Ship by Wed. 20 Nov to Tue. 26 Nov
MOQ : 10
Multiples : 1
10 : USD 0.7736

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Series
Brand
Factory Pack Quantity :
Configuration
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the ECH8690-TL-H from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the ECH8690-TL-H and other electronic components in the MOSFETs category and beyond.

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Ordering number : ENA2185B ECH8690 Power MOSFET ECH8690 Electrical Characteristics at Ta = 25C Ratings Parameter Symbol Conditions Unit min typ max N-channel Drain to Source Breakdown Voltage V( ) I =1mA, V=0V 60 V BR DSS D GS Zero-Gate Voltage Drain Current I V =60V, V=0V 1 A DSS DS GS Gate to Source Leakage Current I V =16V, V=0V 10 A GSS GS DS Cutoff Voltage V(off) V =10V, I=1mA 1.2 2.6V GS DS D Forward Transfer Admittance yfs V =10V, I=2A 4.2 S DS D R(on)1 I =2A, V=10V 42 55m DS D GS Static Drain to Source On-State R(on)2 I =1A, V=4.5V 53 74m DS D GS Resistance R(on)3 I =1A, V=4V 61 85m DS D GS Input Capacitance Ciss 955 pF Output Capacitance Coss V =20V, f=1MHz 58 pF DS Reverse Transfer Capacitance Crss 45 pF Turn-ON Delay Time t (on) 7 ns d Rise Time t 8.4 ns r See specified Test Circuit. Turn-OFF Delay Time t (off) 76 ns d Fall Time t 23 ns f Total Gate Charge Qg 18 nC Gate to Source Charge Qgs V =30V, V =10V, I =4.7A 3 nC DS GS D Gate to Drain Miller Charge Qgd 2.8 nC Diode Forward Voltage V I =4.7A, V=0V 0.82 1.2V SD S GS P-channel Drain to Source Breakdown Voltage V( ) I =-1mA, V=0V -60 V BR DSS D GS Zero-Gate Voltage Drain Current I V =-60V, V=0V -1 A DSS DS GS Gate to Source Leakage Current I V =16V, V=0V 10 A GSS GS DS Cutoff Voltage V(off) V =-10V, I=-1mA -1.2 -2.6V GS DS D Forward Transfer Admittance yfs V =-10V, I=-1.5A 3.4 S DS D R(on)1 I =-1A, V=-10V 73 94m DS D GS Static Drain to Source On-State R(on)2 I =-0.5A, V=-4.5V 97 135m DS D GS Resistance R(on)3 I =-0.5A, V=-4V 108 153m DS D GS Input Capacitance Ciss 790 pF Output Capacitance Coss V =-20V, f=1MHz 63 pF DS Reverse Transfer Capacitance Crss 45 pF Turn-ON Delay Time t (on) 10 ns d Rise Time t 8.8 ns r See specified Test Circuit. Turn-OFF Delay Time t (off) 84 ns d Fall Time t 29 ns f Total Gate Charge Qg 15 nC Gate to Source Charge Qgs V =-30V, V =-10V, I =-3.5A 2.6 nC DS GS D Gate to Drain Miller Charge Qgd 2.2 nC Diode Forward Voltage V I =-3.5A, V=0V -0.83 -1.2V SD S GS No.A2185-2/8

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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