X-On Electronics has gained recognition as a prominent supplier of FDC2612 MOSFET across the USA, India, Europe, Australia, and various other global locations. FDC2612 MOSFET are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFET, ensuring timely deliveries around the world.

FDC2612 ON Semiconductor

FDC2612 electronic component of ON Semiconductor
Images are for reference only
See Product Specifications
Part No.FDC2612
Manufacturer: ON Semiconductor
Category: MOSFET
Description: Transistor: N-MOSFET; unipolar; 200V; 1.1A; 1.6W; SuperSOT-6
Datasheet: FDC2612 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

3000: USD 0.3402 ea
Line Total: USD 1020.6

Availability - 0
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
0
Ship by Fri. 02 Aug to Thu. 08 Aug
MOQ : 1
Multiples : 1
1 : USD 0.9693
10 : USD 0.8176
100 : USD 0.627
500 : USD 0.4957
1000 : USD 0.3965

0
Ship by Fri. 02 Aug to Thu. 08 Aug
MOQ : 1
Multiples : 1
1 : USD 0.9693
10 : USD 0.8176
100 : USD 0.627
500 : USD 0.4957
1000 : USD 0.3965

0
Ship by Fri. 02 Aug to Thu. 08 Aug
MOQ : 3000
Multiples : 3000
3000 : USD 0.3743
6000 : USD 0.3346
15000 : USD 0.3222
30000 : USD 0.311

0
Ship by Fri. 02 Aug to Thu. 08 Aug
MOQ : 3000
Multiples : 3000
3000 : USD 0.3402
6000 : USD 0.315
9000 : USD 0.315
12000 : USD 0.315
15000 : USD 0.315

0
Ship by Thu. 08 Aug to Mon. 12 Aug
MOQ : 1
Multiples : 1
1 : USD 2.457
10 : USD 0.9079
100 : USD 0.6685
500 : USD 0.5281
1000 : USD 0.4234
3000 : USD 0.3823

0
Ship by Fri. 02 Aug to Thu. 08 Aug
MOQ : 3
Multiples : 1
3 : USD 0.6757
25 : USD 0.5875
33 : USD 0.4885
89 : USD 0.4613

   
Manufacturer
Product Category
Technology
Kind Of Package
Mounting
Case
Polarisation
Type Of Transistor
Drain-Source Voltage
Gate-Source Voltage
Drain Current
On-State Resistance
Gate Charge
Power Dissipation
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We are delighted to provide the FDC2612 from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FDC2612 and other electronic components in the MOSFET category and beyond.

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ON Semiconductor Is Now To learn more about onsemi, please visit our website at www.onsemi.com onsemi andand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided as-is and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. Typical parameters which may be provided in onsemi data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdo nsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. FDC2612 FDC2612 200V N-Channel PowerTrench MOSFET Features General Description This N-Channel MOSFET has been designed 1.1 A, 200 V. R = 725 m V = 10 V DS(ON) GS specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional High performance trench technology for extremely switching PWM controllers. It has been optimized for low R DS(ON) low gate charge, low R and fast switching speed. DS(ON) High power and current handling capability Applications Fast switching speed DC/DC converter Low gate charge (8nC typical) S D 1 6 D 2 5 G D 3 4 TM D SuperSOT -6 o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage 200 V DSS V Gate-Source Voltage V GSS 20 I Drain Current Continuous (Note 1a) 1.1 A D Pulsed 4 P Maximum Power Dissipation (Note 1a) 1.6 W D (Note 1b) 0.8 T , T Operating and Storage Junction Temperature Range J STG 55 to +150 C Thermal Characteristics Thermal Resistance, Junction-to-Ambient (Note 1a) 78 RJA C/W R Thermal Resistance, Junction-to-Case (Note 1) 30 C/W JC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity .262 FDC2612 7 8mm 3000 units Publication Order Number: 2002 Semiconductor Components Industries, LLC. FDC2612/D September-2017, Rev. 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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