X-On Electronics has gained recognition as a prominent supplier of FDC3512 MOSFETs across the USA, India, Europe, Australia, and various other global locations. FDC3512 MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

FDC3512 ON Semiconductor

FDC3512 electronic component of ON Semiconductor
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Part No.FDC3512
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: MOSFET 80V N-Ch PowerTrench
Datasheet: FDC3512 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 0.2821 ea
Line Total: USD 846.3 
Availability - 0
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 1
Multiples : 1
1 : USD 1.2357
10 : USD 1.0479
100 : USD 0.8027
500 : USD 0.6347
1000 : USD 0.5077

0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 1
Multiples : 1
1 : USD 1.2357
10 : USD 1.0479
100 : USD 0.8027
500 : USD 0.6347
1000 : USD 0.5077

0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.4793
6000 : USD 0.4284
15000 : USD 0.4125
30000 : USD 0.3982

0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.2821
6000 : USD 0.2821
9000 : USD 0.2821
12000 : USD 0.2821

0
Ship by Thu. 05 Dec to Tue. 10 Dec
MOQ : 1
Multiples : 1
1 : USD 0.7615
10 : USD 0.634
30 : USD 0.5702
100 : USD 0.5065
500 : USD 0.469
1000 : USD 0.4502

0
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 2.754
10 : USD 1.0103
100 : USD 0.7441
500 : USD 0.5886
1000 : USD 0.4709
3000 : USD 0.4255
6000 : USD 0.4147

0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.4292
6000 : USD 0.4016
9000 : USD 0.3897

0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.4524
6000 : USD 0.4315
9000 : USD 0.4034
30000 : USD 0.3996

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Tradename
Configuration
Series
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Forward Transconductance - Min
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Product
Transistor Type
Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
Category
Brand Category
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We are delighted to provide the FDC3512 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FDC3512 and other electronic components in the MOSFETs category and beyond.

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ON Semiconductor Is Now To learn more about onsemi, please visit our website at www.onsemi.com onsemi andand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided as-is and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. Typical parameters which may be provided in onsemi data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdo nsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. FDC3512 FDC3512 Features 80V N-Channel PowerTrench MOSFET 3.0 A, 80 V R = 77 m V = 10 V DS(ON) GS General Description R = 88 m V = 6 V DS(ON) GS This N-Channel MOSFET has been designed High performance trench technology for extremely specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional low R DS(ON) switching PWM controllers. It has been optimized for low gate charge, low R and fast switching speed. DS(ON) Low gate charge (13nC typ) Applications High power and current handling capability DC/DC converter Fast switching speed S D 1 6 D 2 5 G D 3 4 TM D SuperSOT -6 o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage 80 V DSS V Gate-Source Voltage 20 V GSS I Drain Current Continuous (Note 1a) 3.0 A D ulsed 20 P P D Maximum Power Dissipation (Note 1a) 1.6 W (Note 1b) 0.8 T , T Operating and Storage Junction Temperature Range 55 to +150 C J STG Thermal Characteristics R Thermal Resistance, Junction-to-Ambient (Note 1a) 78 C/W JA Thermal Resistance, Junction-to-Case (Note 1) 30 R C/W JC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity .352 FDC3512 7 8mm 3000 units Publication Order Number: 2002 Semiconductor Components Industries, LLC. FDC3512/D October-2017, Rev. 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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