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Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.FDC6306P February 1999 FDC6306P Dual P-Channel 2.5V Specified PowerTrench MOSFET Features General Description These P-Channel 2.5V specified MOSFETs are produced -1.9 A, -20 V. R = 0.170 V = -4.5 V DS(on) GS using Fairchild Semiconductor s advanced PowerTrench R = 0.250 V = -2.5 V DS(on) GS process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for Low gate charge (3 nC typical). superior switching performance. Fast switching speed. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications High performance trench technology for extremely where the bigger more expensive SO-8 and TSSOP-8 low R . DS(ON) packages are impractical. TM SuperSOT -6 package: small footprint (72% smaller Applications than standard SO-8) low profile (1mm thick). Load switch Battery protection Power management D2 S1 4 3 D1 2 5 G2 S2 TM 1 6 SuperSOT -6 G1 T = 25C unless otherwise noted Absolute Maximum Ratings A Symbol Parameter Ratings Units V Drain-Source Voltage -20 V DSS V Gate-Source Voltage 8V GSS I Drain Current - Continuous (Note 1a) -1.9 A D - Pulsed -5 P Power Dissipation for Single Operation (Note 1a) 0.96 W D (Note 1b) 0.9 (Note 1c) 0.7 T , T Operating and Storage Junction Temperature Range -55 to +150 C J stg Thermal Characteristics R Thermal Resistance, Junction-to-Ambient (Note 1a) 130 C/W JA (Note 1) R Thermal Resistance, Junction-to-Case 60 C/W JC Package Outlines and Ordering Information Device Marking Device Reel Size Tape Width Quantity FDC6306P 7 8mm 3000 units 306 . 1999 Fairchild Semiconductor Corporation FDC6306P Rev. C