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Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.FDC6310P April 2001 FDC6310P Dual P-Channel 2.5V Specified PowerTrench MOSFET General Description Features These P-Channel 2.5V specified MOSFETs are 2.2 A, 20 V. R = 125 m V = 4.5 V DS(ON) GS produced using Fairchild Semiconductor s advanced RDS(ON) = 190 m V GS = 2.5 V PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low Low gate charge gate charge for superior switching performance. These devices have been designed to offer exceptional Fast switching speed power dissipation in a very small footprint for applications where the bigger more expensive SO-8 High performance trench technology for extremely and TSSOP-8 packages are impractical. low RDS(ON) Applications SuperSOT TM -6 package: small footprint 72% smaller than standard SO-8) low profile (1mm thick) Load switch Battery protection Power management D2 S1 4 3 D1 5 2 G2 6 1 S2 TM SuperSOT -6 G1 o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units VDSS Drain-Source Voltage 20 V V Gate-Source Voltage 12 V GSS I Drain Current Continuous (Note 1a) 2.2 A D Pulsed 6 PD Power Dissipation for Single Operation (Note 1a) 0.96 W (Note 1b) 0.9 (Note 1c) 0.7 T , T Operating and Storage Junction Temperature Range 55 to +150 C J STG Thermal Characteristics Thermal Resistance, Junction-to-Ambient (Note 1a) 130 R C/W JA Thermal Resistance, Junction-to-Case (Note 1) 60 R C/W JC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity .310 FDC6310P 7 8mm 3000 units 2001 Fairchild Semiconductor Corporation FDC6310P Rev C(W)