X-On Electronics has gained recognition as a prominent supplier of FDC655BN MOSFETs across the USA, India, Europe, Australia, and various other global locations. FDC655BN MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

FDC655BN ON Semiconductor

FDC655BN electronic component of ON Semiconductor
FDC655BN ON Semiconductor
FDC655BN MOSFETs
FDC655BN  Semiconductors

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See Product Specifications
Part No. FDC655BN
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: Transistor: N-MOSFET; unipolar; 30V; 6.3A; 1.6W; SuperSOT-6
Datasheet: FDC655BN Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
148: USD 0.4389 ea
Line Total: USD 64.96 
Availability - 2910
Ship by Thu. 01 May to Wed. 07 May
MOQ: 148  Multiples: 1
Pack Size: 1
Availability Price Quantity
8730
Ship by Thu. 01 May to Wed. 07 May
MOQ : 3000
Multiples : 3000
3000 : USD 0.1828
6000 : USD 0.1778
9000 : USD 0.1733
12000 : USD 0.1707
27000 : USD 0.1668
51000 : USD 0.1644
102000 : USD 0.162

8730
Ship by Thu. 01 May to Wed. 07 May
MOQ : 3000
Multiples : 3000
3000 : USD 0.1638
6000 : USD 0.155
9000 : USD 0.1537
12000 : USD 0.1525
15000 : USD 0.15

2575
Ship by Thu. 08 May to Tue. 13 May
MOQ : 5
Multiples : 5
5 : USD 0.5496
50 : USD 0.3307
150 : USD 0.2661
500 : USD 0.2268
3000 : USD 0.2094
6000 : USD 0.1989

1940
Ship by Tue. 29 Apr to Thu. 01 May
MOQ : 1
Multiples : 1
1 : USD 0.798
10 : USD 0.5418
50 : USD 0.434
78 : USD 0.2408
213 : USD 0.2268

8730
Ship by Thu. 01 May to Wed. 07 May
MOQ : 3000
Multiples : 3000
3000 : USD 0.1796
6000 : USD 0.1623
9000 : USD 0.1466

8730
Ship by Thu. 01 May to Wed. 07 May
MOQ : 3000
Multiples : 3000
3000 : USD 0.2297
6000 : USD 0.2236
9000 : USD 0.2179
12000 : USD 0.2146
27000 : USD 0.2098

23280
Ship by Thu. 01 May to Wed. 07 May
MOQ : 3000
Multiples : 3000
3000 : USD 0.1831
6000 : USD 0.1655
9000 : USD 0.1495

5820
Ship by Thu. 01 May to Wed. 07 May
MOQ : 1694
Multiples : 1
1694 : USD 0.2768

4195
Ship by Thu. 01 May to Wed. 07 May
MOQ : 98
Multiples : 1
98 : USD 0.6651
100 : USD 0.6623
250 : USD 0.6595
500 : USD 0.6568
1000 : USD 0.6287
3000 : USD 0.6261

2910
Ship by Thu. 01 May to Wed. 07 May
MOQ : 148
Multiples : 1
148 : USD 0.4389
201 : USD 0.3232
500 : USD 0.2479
1000 : USD 0.2134
3000 : USD 0.1591
6000 : USD 0.1438
9000 : USD 0.1416

1179
Ship by Thu. 01 May to Wed. 07 May
MOQ : 209
Multiples : 1
209 : USD 0.6435
500 : USD 0.4901
1000 : USD 0.3549

   
Manufacturer
Product Category
Transistor Polarity
Brand
Continuous Drain Current Id
Drain Source Voltage Vds
On Resistance Rdson
Rdson Test Voltage Vgs
Threshold Voltage Vgs
Power Dissipation Pd
Transistor Case Style
No. Of Pins
Operating Temperature Max
Msl
Svhc
Operating Temperature Min
Operating Temperature Range
Kind Of Package
LoadingGif
 
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We are delighted to provide the FDC655BN from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FDC655BN and other electronic components in the MOSFETs category and beyond.

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ON Semiconductor Is Now To learn more about onsemi, please visit our website at www.onsemi.com onsemi andand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided as-is and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. Typical parameters which may be provided in onsemi data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdo nsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. FDC655BN Single N-Channel, Logic Level, PowerTrench MOSFET FDC655BN Single N-Channel, Logic Level, PowerTrench MOSFET 30 V, 6.3 A, 25 m Features General Description Max r = 25 m at V = 10 V, I = 6.3 A This N-Channel Logic Level MOSFET is produced using DS(on) GS D ON Semiconductors advanced PowerTrench process Max r = 33 m at V = 4.5 V, I = 5.5 A DS(on) GS D that has been especially tailored to minimize the on- Fast switching state resistance and yet maintain superior switching performance. Low gate charge These devices are well suited for low voltage and battery High performance trchnology for extremely low r DS(on) powered applicatoins where low in-line power loss and fast Termination is Lead-free and RoHS Compliant switching are required. D D D D S G MOSFET Maximum Ratings T = 25C unless otherwise noted C Symbol Parameter Ratings Units V Drain to Source Voltage 30 V DS V Gate to Source Voltage 20 V GS -Continuous T = 25C (Note 1a) 6.3 A I A D -Pulsed 20 Power Dissipation ( Note 1a) 1.6 P W D Power Dissipation (Note 1b) 0.8 T , T Operating and Storage Junction Temperature Range -55 to + 150 C J STG Thermal Characteristics R Thermal Resistance, Junction to Ambient (Note 1a) 78 C/W JA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity TM .55B FDC655BN SSOT-6 7 8 mm 3000 units 2010 Semiconductor Components Industries, LLC. Publication Order Number: 1 October-2017, Rev.3 FDC655BN/D

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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