X-On Electronics has gained recognition as a prominent supplier of FDC655BN MOSFETs across the USA, India, Europe, Australia, and various other global locations. FDC655BN MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

FDC655BN ON Semiconductor

FDC655BN electronic component of ON Semiconductor
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See Product Specifications
Part No.FDC655BN
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: Transistor: N-MOSFET; unipolar; 30V; 6.3A; 1.6W; SuperSOT-6
Datasheet: FDC655BN Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 0.1469 ea
Line Total: USD 440.7 
Availability - 8730
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
8730
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.1768
6000 : USD 0.172
9000 : USD 0.1676
12000 : USD 0.1651
27000 : USD 0.1614
51000 : USD 0.159
102000 : USD 0.1566

8730
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.1469
6000 : USD 0.1469
12000 : USD 0.1469
15000 : USD 0.1469
45000 : USD 0.1469

2921
Ship by Fri. 06 Dec to Wed. 11 Dec
MOQ : 5
Multiples : 5
5 : USD 0.3098
50 : USD 0.246
150 : USD 0.2185
500 : USD 0.1844
3000 : USD 0.169
6000 : USD 0.16

8730
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.239
6000 : USD 0.2326
9000 : USD 0.2266
12000 : USD 0.2232
27000 : USD 0.2182

2910
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 52
Multiples : 1
52 : USD 0.4008
100 : USD 0.2872
250 : USD 0.2843
500 : USD 0.225
1000 : USD 0.1491

   
Manufacturer
Product Category
Transistor Polarity
Brand
Continuous Drain Current Id
Drain Source Voltage Vds
On Resistance Rdson
Rdson Test Voltage Vgs
Threshold Voltage Vgs
Power Dissipation Pd
Transistor Case Style
No. Of Pins
Operating Temperature Max
Msl
Svhc
Operating Temperature Min
Operating Temperature Range
Kind Of Package
LoadingGif
 
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We are delighted to provide the FDC655BN from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FDC655BN and other electronic components in the MOSFETs category and beyond.

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ON Semiconductor Is Now To learn more about onsemi, please visit our website at www.onsemi.com onsemi andand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided as-is and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. Typical parameters which may be provided in onsemi data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdo nsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. FDC655BN Single N-Channel, Logic Level, PowerTrench MOSFET FDC655BN Single N-Channel, Logic Level, PowerTrench MOSFET 30 V, 6.3 A, 25 m Features General Description Max r = 25 m at V = 10 V, I = 6.3 A This N-Channel Logic Level MOSFET is produced using DS(on) GS D ON Semiconductors advanced PowerTrench process Max r = 33 m at V = 4.5 V, I = 5.5 A DS(on) GS D that has been especially tailored to minimize the on- Fast switching state resistance and yet maintain superior switching performance. Low gate charge These devices are well suited for low voltage and battery High performance trchnology for extremely low r DS(on) powered applicatoins where low in-line power loss and fast Termination is Lead-free and RoHS Compliant switching are required. D D D D S G MOSFET Maximum Ratings T = 25C unless otherwise noted C Symbol Parameter Ratings Units V Drain to Source Voltage 30 V DS V Gate to Source Voltage 20 V GS -Continuous T = 25C (Note 1a) 6.3 A I A D -Pulsed 20 Power Dissipation ( Note 1a) 1.6 P W D Power Dissipation (Note 1b) 0.8 T , T Operating and Storage Junction Temperature Range -55 to + 150 C J STG Thermal Characteristics R Thermal Resistance, Junction to Ambient (Note 1a) 78 C/W JA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity TM .55B FDC655BN SSOT-6 7 8 mm 3000 units 2010 Semiconductor Components Industries, LLC. Publication Order Number: 1 October-2017, Rev.3 FDC655BN/D

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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