MOSFET N-Channel, Shielded Gate, POWERTRENCH 150 V, 2.3 A, 144 m FDC86244 www.onsemi.com General Description This NChannel MOSFET is produced using ON Semiconductors advanced POWERTRENCH process that incorporates Shielded Gate technology. This process has been optimized for r , switching DS(on) performance and ruggedness. TSOT23 6Lead Features CASE 419BL Shielded Gate MOSFET Technology Max r = 144 m at V = 10 V, I = 2.3 A DS(on) GS D Max r = 188 m at V = 6 V, I = 1.9 A MARKING DIAGRAM DS(on) GS D High Performance Trench Technology for Extremely Low r DS(on) High Power and Current Handling Capability in a Widely Used &E&Y Surface Mount Package &.244& Fast Switching Speed 1 100% UIL Tested XXX = Specific Device Code This Device is PbFree, Halogen Free/BFR Free and is RoHS &E = Space Designator Compliant &Y = Year of Production &. = Pin One Identifier Applications = PbFree Package Load Switch Synchronous Rectifier PINOUT Primary Switch S G 4 3 D D 5 2 6 1 D D SuperSOTTM 6 ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2010 1 Publication Order Number: March, 2020 Rev. 2 FDC86244/DFDC86244 MOSFET MAXIMUM RATINGS T = 25C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage 150 V DS V Gate to Source Voltage 20 V GS I A Drain Current D Continuous (Note 1a) 2.3 Pulsed 10 E Single Pulse Avalanche Energy (Note 3) 12 mJ AS P W Power Dissipation (Note 1a) 1.6 D Power Dissipation (Note 1b) 0.8 T , T Operating and Storage Junction Temperature Range 55 to +150 C J STG THERMAL CHARACTERISTICS Symbol Parameter Ratings Units C/W RJC Thermal Resistance, Junction to Case 30 RJA Thermal Resistance, Junction to Ambient (Note 1a) 78 PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Package Reel Size Tape Width Quantity 0.244 FDC86244 SSOT6 7 8 mm 3000 Units www.onsemi.com 2