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Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.TM FDD10N20LZ N-Channel UniFET MOSFET November 2013 FDD10N20LZ TM N-Channel UniFET MOSFET 200 V, 7.6 A, 360 m Features Description TM UniFET MOSFET is Fairchild Semiconductors high voltage R = 300 m (Typ.) V = 10 V, I = 3.8 A DS(on) GS D MOSFET family based on planar stripe and DMOS technology. Low Gate Charge (Typ. 12 nC) This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche en- Low C (Typ. 11 pF) rss ergy strength. This device family is suitable for switching power 100% Avalanche Tested converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp bal- Improved dv/dt Capability lasts. ESD Improved Capability RoHS Compliant Applications Lighting Uninterruptible Power Supply AC-DC Power Supply D D G G S D-PAK S o MOSFET Maximum Ratings T = 25 C unless otherwise noted. C Symbol Parameter FDD10N20LZTM Unit V Drain to Source Voltage 200 V DSS V Gate to Source Voltage 20 V GSS o - Continuous (T = 25 C) 7.6 C I Drain Current A D o - Continuous (T = 100 C) 4.5 C I Drain Current - Pulsed (Note 1) 30 A DM E Single Pulsed Avalanche Energy (Note 2) 121 mJ AS I Avalanche Current (Note 1) 7.6 A AR E Repetitive Avalanche Energy (Note 1) 8.3 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns o (T = 25 C) 83 W C P Power Dissipation D o o - Derate Above 25C0.7W/ C o T , T Operating and Storage Temperature Range -55 to +150 C J STG o T Maximum Lead Temperature for Soldering, 1/8 from Case for 5 Seconds 300 C L Thermal Characteristics Symbol Parameter Unit FDD10N20LZTM R Thermal Resistance, Junction to Case, Max. 1.5 JC o C/W R Thermal Resistance, Junction to Ambient, Max. 110 JA 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 FDD10N20LZ Rev. C1