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X-On Electronics has gained recognition as a prominent supplier of FDD10N20LZTM MOSFETs across the USA, India, Europe, Australia, and various other global locations. FDD10N20LZTM MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

FDD10N20LZTM ON Semiconductor

FDD10N20LZTM electronic component of ON Semiconductor
FDD10N20LZTM ON Semiconductor
FDD10N20LZTM MOSFETs
FDD10N20LZTM  Semiconductors

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See Product Specifications
Part No. FDD10N20LZTM
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: MOSFET 200V N-Channel MOSFET, UniFET
Datasheet: FDD10N20LZTM Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 2500
Multiples : 2500
2500 : USD 0.2622
5000 : USD 0.2622
7500 : USD 0.2622
10000 : USD 0.2622
12500 : USD 0.2622
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 1.4572
10 : USD 1.0472
100 : USD 0.7729
500 : USD 0.6107
1000 : USD 0.47
2500 : USD 0.4257
5000 : USD 0.4131
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 1.2981
5 : USD 0.8895
25 : USD 0.6727
30 : USD 0.5084
82 : USD 0.4809
N/A

Obsolete
0
MOQ : 19
Multiples : 1
19 : USD 0.6414
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
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Number of Channels
Qg - Gate Charge
Series
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Forward Transconductance - Min
Power Dissipation
Rds On
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Configuration
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We are delighted to provide the FDD10N20LZTM from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FDD10N20LZTM and other electronic components in the MOSFETs category and beyond.

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Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore ( ), the underscore ( ) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore ( ). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild questions onsemi.com. ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductors product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. Typical parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.TM FDD10N20LZ N-Channel UniFET MOSFET November 2013 FDD10N20LZ TM N-Channel UniFET MOSFET 200 V, 7.6 A, 360 m Features Description TM UniFET MOSFET is Fairchild Semiconductors high voltage R = 300 m (Typ.) V = 10 V, I = 3.8 A DS(on) GS D MOSFET family based on planar stripe and DMOS technology. Low Gate Charge (Typ. 12 nC) This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche en- Low C (Typ. 11 pF) rss ergy strength. This device family is suitable for switching power 100% Avalanche Tested converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp bal- Improved dv/dt Capability lasts. ESD Improved Capability RoHS Compliant Applications Lighting Uninterruptible Power Supply AC-DC Power Supply D D G G S D-PAK S o MOSFET Maximum Ratings T = 25 C unless otherwise noted. C Symbol Parameter FDD10N20LZTM Unit V Drain to Source Voltage 200 V DSS V Gate to Source Voltage 20 V GSS o - Continuous (T = 25 C) 7.6 C I Drain Current A D o - Continuous (T = 100 C) 4.5 C I Drain Current - Pulsed (Note 1) 30 A DM E Single Pulsed Avalanche Energy (Note 2) 121 mJ AS I Avalanche Current (Note 1) 7.6 A AR E Repetitive Avalanche Energy (Note 1) 8.3 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns o (T = 25 C) 83 W C P Power Dissipation D o o - Derate Above 25C0.7W/ C o T , T Operating and Storage Temperature Range -55 to +150 C J STG o T Maximum Lead Temperature for Soldering, 1/8 from Case for 5 Seconds 300 C L Thermal Characteristics Symbol Parameter Unit FDD10N20LZTM R Thermal Resistance, Junction to Case, Max. 1.5 JC o C/W R Thermal Resistance, Junction to Ambient, Max. 110 JA 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 FDD10N20LZ Rev. C1

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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