SSM3K35MFV TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM3K35MFV High-Speed Switching Applications Unit: mm Analog Switch Applications 1.20.05 1.2 V drive 0.80.05 Low ON-resistance : R = 20 (max) ( V = 1.2 V) on GS : R = 8 (max) ( V = 1.5 V) on GS 1 : R = 4 (max) ( V = 2.5 V) on GS : R = 3 (max) ( V = 4.0 V) 2 on GS 3 Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Drainsource voltage V 20 V DSS Gatesource voltage V 10 V GSS 1.Ga te DC I 180 D 2.Sou rce Drain current mA 3.D ra i n Pulse I 360 DP Drain power dissipation P (Note 1) 150 mW D Channel temperature T 150 C JEDEC ch Storage temperature T 55 to 150 C stg JEITA TOSHIBA 2-1L1B Note 1: Mounted on an FR4 board 2 (25.4 mm 25.4 mm 1.6 t, Cu Pad: 0.585 mm ) Weight: 1.5 mg (typ.) Electrical Characteristics (Ta = 25C) Characteristic Symbol Test Condition Min Typ. MaxUnit Gate leakage current I V = 10 V, V = 0 V 10 A GSS GS DS Drainsource breakdown voltage V I = 0.1 mA, V = 0 V 20 V (BR) DSS D GS Drain cutoff current I V = 20 V, V = 0 V 1 A DSS DS GS Gate threshold voltage V V = 3 V, I = 1 mA 0.4 1.0 V th DS D Forward transfer admittance Y V = 3 V, I = 50 mA (Note 2) 115 mS fs DS D I = 50 mA, V = 4 V (Note 2) 1.5 3 D GS I = 50 mA, V = 2.5 V (Note 2) 2 4 D GS Drainsource ON-resistance R DS (ON) I = 5 mA, V = 1.5 V (Note 2) 3 8 D GS I = 5 mA, V = 1.2 V (Note 2) 5 20 D GS Input capacitance C 9.5 iss Reverse transfer capacitance C V = 3 V, V = 0 V, f = 1 MHz 4.1 pF rss DS GS Output capacitance C 9.5 oss Turn-on time t 115 on V = 3 V, I = 50 mA, DD D Switching time ns V = 0 to 2.5 V GS Turn-off time t 300 off Drainsource forward voltage V I = - 180 mA, V = 0 V (Note 2) -0.9 -1.2 V DSF D GS Note 2: Pulse test Start of commercial production 2008-01 1 2014-03-01 1.20.05 0.80.05 0.50.05 0.4 0.4 0.220.05 0.320.05 0.130.05SSM3K35MFV Switching Time Test Circuit (a) Test Circuit (b) V IN 2.5 V OUT 90% 2.5 V IN 10% 0 R 0 V L 10 s V DD (c) V V OUT DD 10% V = 3 V DD Duty 1% 90% V : t , t < 5 ns V IN r f DS (ON) t t r f (Z = 50 ) out Common Source t t on off Ta = 25C Marking Equivalent Circuit (top view) 3 3 KZ 1 2 1 2 Notice on Usage V can be expressed as the voltage between gate and source when the low operating current value is I = 1 mA for th D this product. For normal switching operation, V requires a higher voltage than V and V requires a lower GS (on) th GS (off) voltage than V (The relationship can be established as follows: V < V < V ) th. GS (off) th GS (on). Take this into consideration when using the device. Handling Precaution When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that come into direct contact with devices should be made of antistatic materials. 2 2014-03-01 50