X-On Electronics has gained recognition as a prominent supplier of SSM3K35MFV(TPL3) MOSFETs across the USA, India, Europe, Australia, and various other global locations. SSM3K35MFV(TPL3) MOSFETs are a product manufactured by Toshiba. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SSM3K35MFV(TPL3) Toshiba

SSM3K35MFV(TPL3) electronic component of Toshiba
SSM3K35MFV(TPL3) Toshiba
SSM3K35MFV(TPL3) MOSFETs
SSM3K35MFV(TPL3)  Semiconductors

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See Product Specifications
Part No. SSM3K35MFV(TPL3)
Manufacturer: Toshiba
Category: MOSFETs
Description: Toshiba MOSFET Singel N-ch 20V 0.18A
Datasheet: SSM3K35MFV(TPL3) Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 0.5583
10 : USD 0.4005
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 0.9889
10 : USD 0.5436
100 : USD 0.0972
1000 : USD 0.0786
2500 : USD 0.0663
8000 : USD 0.0614
24000 : USD 0.059
48000 : USD 0.0565
96000 : USD 0.0553
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Brand
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Height
Length
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Transistor Type
Width
Cnhts
Hts Code
Mxhts
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We are delighted to provide the SSM3K35MFV(TPL3) from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SSM3K35MFV(TPL3) and other electronic components in the MOSFETs category and beyond.

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SSM3K35MFV TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM3K35MFV High-Speed Switching Applications Unit: mm Analog Switch Applications 1.20.05 1.2 V drive 0.80.05 Low ON-resistance : R = 20 (max) ( V = 1.2 V) on GS : R = 8 (max) ( V = 1.5 V) on GS 1 : R = 4 (max) ( V = 2.5 V) on GS : R = 3 (max) ( V = 4.0 V) 2 on GS 3 Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Drainsource voltage V 20 V DSS Gatesource voltage V 10 V GSS 1.Ga te DC I 180 D 2.Sou rce Drain current mA 3.D ra i n Pulse I 360 DP Drain power dissipation P (Note 1) 150 mW D Channel temperature T 150 C JEDEC ch Storage temperature T 55 to 150 C stg JEITA TOSHIBA 2-1L1B Note 1: Mounted on an FR4 board 2 (25.4 mm 25.4 mm 1.6 t, Cu Pad: 0.585 mm ) Weight: 1.5 mg (typ.) Electrical Characteristics (Ta = 25C) Characteristic Symbol Test Condition Min Typ. MaxUnit Gate leakage current I V = 10 V, V = 0 V 10 A GSS GS DS Drainsource breakdown voltage V I = 0.1 mA, V = 0 V 20 V (BR) DSS D GS Drain cutoff current I V = 20 V, V = 0 V 1 A DSS DS GS Gate threshold voltage V V = 3 V, I = 1 mA 0.4 1.0 V th DS D Forward transfer admittance Y V = 3 V, I = 50 mA (Note 2) 115 mS fs DS D I = 50 mA, V = 4 V (Note 2) 1.5 3 D GS I = 50 mA, V = 2.5 V (Note 2) 2 4 D GS Drainsource ON-resistance R DS (ON) I = 5 mA, V = 1.5 V (Note 2) 3 8 D GS I = 5 mA, V = 1.2 V (Note 2) 5 20 D GS Input capacitance C 9.5 iss Reverse transfer capacitance C V = 3 V, V = 0 V, f = 1 MHz 4.1 pF rss DS GS Output capacitance C 9.5 oss Turn-on time t 115 on V = 3 V, I = 50 mA, DD D Switching time ns V = 0 to 2.5 V GS Turn-off time t 300 off Drainsource forward voltage V I = - 180 mA, V = 0 V (Note 2) -0.9 -1.2 V DSF D GS Note 2: Pulse test Start of commercial production 2008-01 1 2014-03-01 1.20.05 0.80.05 0.50.05 0.4 0.4 0.220.05 0.320.05 0.130.05SSM3K35MFV Switching Time Test Circuit (a) Test Circuit (b) V IN 2.5 V OUT 90% 2.5 V IN 10% 0 R 0 V L 10 s V DD (c) V V OUT DD 10% V = 3 V DD Duty 1% 90% V : t , t < 5 ns V IN r f DS (ON) t t r f (Z = 50 ) out Common Source t t on off Ta = 25C Marking Equivalent Circuit (top view) 3 3 KZ 1 2 1 2 Notice on Usage V can be expressed as the voltage between gate and source when the low operating current value is I = 1 mA for th D this product. For normal switching operation, V requires a higher voltage than V and V requires a lower GS (on) th GS (off) voltage than V (The relationship can be established as follows: V < V < V ) th. GS (off) th GS (on). Take this into consideration when using the device. Handling Precaution When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that come into direct contact with devices should be made of antistatic materials. 2 2014-03-01 50

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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