SSM3K37CT TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K37CT High Speed Switching Applications Analog Switch Applications Unit : mm 1.5Vdrive Low ON-resistance R = 5.60 (max) ( V = 1.5 V) DS(ON) GS R = 4.05 (max) ( V = 1.8 V) DS(ON) GS R = 3.02 (max) ( V = 2.5 V) DS(ON) GS R = 2.20 (max) ( V = 4.5 V) DS(ON) GS Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Drain-Source voltage V 20 V DSS Gate-Source voltage V 10 V GSS DC I 200 D Drain current mA Pulse I 400 DP Power dissipation P (Note1) 100 mW D Channel temperature T 150 C ch CST3 Storage temperature range T 55 to 150 C stg Note: Using continuously under heavy loads (e.g. the application of JEDEC high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the JEITA reliability significantly even if the operating conditions (i.e. TOSHIBA 2-1J1B operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Weight: 0.75mg(typ.) Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on FR4 board 2 (10 mm 10 mm 1.0 mm, Cu Pad: 100 mm ) Marking(top view) Pin Condition (top view) Equivalent Circuit Polarity mark Polarity mark (on the top) 3 1 3 1 SU 2 2 1. Gate 2. Source 3. Drain *Electrodes: On the bottom Start of commercial production 2010-11 1 2014-03-01 SSM3K37CT Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. Max Unit V I = 1 mA, V = 0 V 20 (BR) DSS D GS Drain-source breakdown voltage V V I = 1 mA, V = -10 V 12 (BR) DSX D GS Drain cut-off current I V = 20 V, V = 0 V 1 A DSS DS GS Gate leakage current I V = 10 V, V = 0 V 1 A GSS GS DS Gate threshold voltage V V = 3 V, I = 1 mA 0.35 1.0 V th DS D Forward transfer admittance Y V = 3 V, I = 100 mA (Note2) 0.14 0.28 S fs DS D I = 100 mA, V = 4.5 V (Note2) 1.65 2.20 D GS I = 50 mA, V = 2.5 V (Note2) 2.16 3.02 D GS Drain-source ON-resistance R DS (ON) I = 20 mA, V = 1.8 V (Note2) 2.66 4.05 D GS I = 10 mA, V = 1.5 V (Note2) 3.07 5.60 D GS Input capacitance C 12 iss Output capacitance C V = 10 V, V = 0 V, f = 1 MHz 5.5 pF oss DS GS Reverse transfer capacitance C 4.1 rss Turn-on time t V = 10 V, I = 100 mA 18 on DD D Switching time ns V = 0 to 2.5 V, R = 50 Turn-off time t 36 GS G off Drain-Source forward voltage V I = -200 mA, V = 0 V (Note2) -0.89 -1.2 V DSF D GS Note2: Pulse test Switching Time Test Circuit (a) Test Circuit (b) V IN 2.5 V 90% V = 10 V DD 2.5 V OUT R = 50 G 10% IN 0 V Duty 1% 0 V V : t , t < 5 ns IN r f V DD Common source (c) V OUT 90% 10 s Ta = 25C 10% V DD V DS (ON) t t r f t t on off Precaution Let V be the voltage applied between gate and source that causes the drain current (I ) to be low (1mA for the th D SSM3K37CT). Then, for normal switching operation, V must be higher than V and V must be lower than GS(on) th, GS(off) V This relationship can be expressed as: V < V < V th. GS(off) th GS(on). Take this into consideration when using the device. Handling Precaution When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that come into direct contact with devices should be made of antistatic materials. Thermal resistance R and power dissipation P vary depending on board material, board area, board thickness th (ch-a) D and pad area. When using this device, please take heat dissipation into consideration 2 2014-03-01 R G