X-On Electronics has gained recognition as a prominent supplier of SSM3K59CTB,L3F MOSFETs across the USA, India, Europe, Australia, and various other global locations. SSM3K59CTB,L3F MOSFETs are a product manufactured by Toshiba. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SSM3K59CTB,L3F Toshiba

SSM3K59CTB,L3F electronic component of Toshiba
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Part No.SSM3K59CTB,L3F
Manufacturer: Toshiba
Category: MOSFETs
Description: MOSFET Small-signal MOSFET ID: 2A, VDSS: 40V
Datasheet: SSM3K59CTB,L3F Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 10000
Multiples : 10000
10000 : USD 0.1022
20000 : USD 0.0926
50000 : USD 0.0922
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 0.622
10 : USD 0.4841
100 : USD 0.329
500 : USD 0.2469
1000 : USD 0.1851
2000 : USD 0.1697
5000 : USD 0.1594
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 0.622
10 : USD 0.4841
100 : USD 0.329
500 : USD 0.2469
1000 : USD 0.1851
2000 : USD 0.1697
5000 : USD 0.1594
N/A

Obsolete
0
MOQ : 10000
Multiples : 10000
10000 : USD 0.1544
30000 : USD 0.1368
50000 : USD 0.1316
100000 : USD 0.1303
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 0.5858
10 : USD 0.4752
100 : USD 0.2548
500 : USD 0.1937
1000 : USD 0.1521
2500 : USD 0.1417
10000 : USD 0.1225
20000 : USD 0.1125
50000 : USD 0.1125
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Brand
Factory Pack Quantity :
Configuration
Height
Length
Series
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the SSM3K59CTB,L3F from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SSM3K59CTB,L3F and other electronic components in the MOSFETs category and beyond.

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SSM3K59CTB MOSFETs Silicon N-Channel MOS SSM3K59CTBSSM3K59CTBSSM3K59CTBSSM3K59CTB 1. 1. ApplicationsApplications 1. 1. ApplicationsApplications DC-DC Converters 2. 2. 2. 2. FeaturesFeaturesFeaturesFeatures (1) 1.8-V gate drive voltage. (2) Low drain-source on-resistance : R = 250 m (typ.) ( V = 1.8 V, I = 0.2 A) DS(ON) GS D R = 210 m (typ.) ( V = 2.5 V, I = 0.5 A) DS(ON) GS D R = 185 m (typ.) ( V = 4.5 V, I = 1.0 A) DS(ON) GS D R = 175 m (typ.) ( V = 8.0 V, I = 1.0 A) DS(ON) GS D 3. 3. Packaging and Pin AssignmentPackaging and Pin Assignment 3. 3. Packaging and Pin AssignmentPackaging and Pin Assignment 1: Gate 2: Source 3: Drain CST3B 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, T = 25 ) 4. 4. 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, T = 25 = 25 = 25 ))) aaaa Characteristics Symbol Rating Unit Drain-source voltage V 40 V DSS Gate-source voltage V 12 GSS Drain current (DC) (Note 1) I 2.0 A D Drain current (pulsed) (Note 1) I 4.0 DP Power dissipation (Note 2) P 1000 mW D Channel temperature T 150 ch Storage temperature T -55 to 150 stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Ensure that the channel temperature does not exceed 150 . Note 2: Device mounted on an FR4 board. (25.4 mm 25.4 mm 1.6 mm ,Cu pad: 645 mm2) Start of commercial production 2015-01 2015 Toshiba Corporation 2015-11-26 1 Rev.2.0SSM3K59CTB Note: The MOSFETs in this device are sensitive to electrostatic discharge. When handling this device, the worktables, operators, soldering irons and other objects should be protected against anti-static discharge. Note: The channel-to-ambient thermal resistance, R , and the drain power dissipation, P , vary according to th(ch-a) D the board material, board area, board thickness and pad area. When using this device, be sure to take heat dissipation fully into account. 2015 Toshiba Corporation 2015-11-26 2 Rev.2.0

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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