X-On Electronics has gained recognition as a prominent supplier of SSM3K7002BF,LF(T MOSFET across the USA, India, Europe, Australia, and various other global locations. SSM3K7002BF,LF(T MOSFET are a product manufactured by Toshiba. We provide cost-effective solutions for MOSFET, ensuring timely deliveries around the world.

SSM3K7002BF,LF(T Toshiba

Name: SSM3K7002BF,LF(T
Brand: Toshiba
SKU: SSM3K7002BFLFT_Toshiba
Availability: OutOfStock
Rating: 5 (11 reviews)

SSM3K7002BF,LF(T electronic component of Toshiba

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See Product Specifications

Part No.	SSM3K7002BF,LF(T
Manufacturer:	Toshiba
Category:	MOSFET
Description:	MOSFET N Trench 60V 200mA 3.1V @ 250uA 2.1 Î© @ 500mA,10V S-MINI RoHS
Datasheet:	SSM3K7002BF,LF(T Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

20: USD 0.0476 ea
Line Total: USD 0.95

Availability - 0

MOQ: 20 Multiples: 20
Pack Size: 20

SSM3K7002BF,LF(T More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 Ship by Tue. 23 Jul to Fri. 26 Jul MOQ : 20 Multiples : 20	20 : USD 0.0476 200 : USD 0.0401 600 : USD 0.0347 2000 : USD 0.0301 10000 : USD 0.0294 20000 : USD 0.029

Specifications

Manufacturer Toshiba Toshiba
Product Category MOSFET MOSFET
Category MOSFET MOSFET
Rohs y y
Package S - M in I S - M in I
Brand Category Toshiba Toshiba
Fet Type n trench n trench
Drain To Source Voltagevdss 60 V 60 V
Continuous Drain Current Id @ 25°C 200 mA 200 mA
Vgsth Max @ Id 3.1 V @ 250ua 3.1 V @ 250ua
Rds On Max @ Id Vgs 2.1 @ 500ma,10v 2.1 @ 500ma,10v
Power Dissipation Max 200 mW 200 mW
Drain Source Voltage Vdss 60 V 60 V
Continuous Drain Current Id 200 mA 200 mA
Power Dissipation Pd 200 mW 200 mW
Drain Source On Resistance Rdson@Vgs Id 2.1 Ohms @10V , 500mA 2.1 Ohms @10V , 500mA
Gate Threshold Voltage Vgsth@Id 3.1 V @250uA 3.1 V @250uA
Type N Channel N Channel

We are delighted to provide the SSM3K7002BF,LF(T from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SSM3K7002BF,LF(T and other electronic components in the MOSFET category and beyond.

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Additional Infomation About Product

The SSM3K7002BF,LF(T with MOSFET N Trench 60V 200mA 3.1V @ 250uA 2.1 Î© @ 500mA,10V S-MINI RoHS manufactured by Toshiba is an electronic part used for power supply applications. It is a power field effect transistor (FET) with an N type trench structure, where the gate voltage is 3.1 volts at 250 microamps and the drain-source resistance is 2.1 ohms at 500 milliamps. The supply voltage is rated up to 60 volts and the continuous drain current is 200 milliamps. It is compliant with Restriction of Hazardous Substances (RoHS) safety standards and measures 10 volts using a mini package size.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Toshiba Memory may also be referenced as

Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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