SSM3K7002F(T5L,F,T Toshiba

SSM3K7002F TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type SSM3K7002F High-Speed Switching Applications Unit: mm Analog Switch Applications +0.5 2.5-0.3 Small package +0.25 1.5-0.15 Low ON-resistance : R = 3.3 (max) ( V = 4.5 V) on GS : R = 3.2 (max) ( V = 5 V) on GS 1 : R = 3.0 (max) ( V = 10 V) on GS 23 Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Drain-source voltage V 60 V DS Gate-source voltage V 20 V GSS DC I 200 D Drain current mA 1.Gate Pulse I 800 DP 2.Source Drain power dissipation (Ta = 25C) P 200 mW D 3.Drain S-MINI Channel temperature T 150 C ch Storage temperature range T 55 to 150 C stg JEDEC TO-236MOD JEITA SC-59 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in TOSHIBA 2-3F1F temperature, etc.) may cause this product to decrease in the Weight: 0.012 g (typ.) reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ MaxUnit Gate leakage current I V = 20 V, V = 0 10 A GSS GS DS Drain-source breakdown voltage V I = 0.1 mA, V = 0 60 V (BR) DSS D GS Drain cutoff current I V = 60 V, V = 0 1 A DSS DS GS Gate threshold voltage V V = 10 V, I = 0.25 mA 1.0 2.5 V th DS D Forward transfer admittance Y V = 10 V, I = 200 mA 170 mS fs DS D I = 500 mA, V = 10 V 2.0 3.0 D GS Drain-source ON-resistance R I = 100 mA, V = 5 V 2.1 3.2 DS (ON) D GS I = 100 mA, V = 4.5 V 2.2 3.3 D GS Input capacitance C 17 pF iss Reverse transfer capacitance C V = 25 V, V = 0, f = 1 MHz 1.4 pF DS GS rss Output capacitance C 5.8 pF oss Turn-on delay time td 2.4 4.0 (on) V = 30 V , I = 200 mA , DD D Switching time ns V = 0 to 10 V GS Turn-off delay time td 26 40 (off) 1 2007-11-01 2.90.2 +0.2 1.9 1.1-0.1 0.95 0.95 0~0.1 0.3 +0.1 0.16-0.06 +0.1 0.4-0.05SSM3K7002F Switching Time Test Circuit 10 V (b) V 90 % (a) Test circuit IN OUT IN 10 V 10 % 0 V R L 0 V DD (c) V 10 % OUT V DD 10 s V = 30 V DD 90 % < Duty 1% = V DS (ON) t t r f V : t , t < 2 ns IN r f (Z = 50 ) out td (on) Common Source td (off) Ta = 25 C Marking Equivalent Circuit (top view) 3 3 NC 1 2 12 Precaution V can be expressed as the voltage between gate and source when the low operating current value is I = 0.25 mA th D for this product. For normal switching operation, V requires a higher voltage than V and V requires a GS (on) th, GS (off) lower voltage than V th. (The relationship can be established as follows: V < V < V ) GS (off) th GS (on). Take this into consideration when using the device. Handling Precaution When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that come into direct contact with devices should be made of antistatic materials. 2 2007-11-01 50