X-On Electronics has gained recognition as a prominent supplier of SSM3K62TU,LF MOSFETs across the USA, India, Europe, Australia, and various other global locations. SSM3K62TU,LF MOSFETs are a product manufactured by Toshiba. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SSM3K62TU,LF Toshiba

SSM3K62TU,LF electronic component of Toshiba
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Part No.SSM3K62TU,LF
Manufacturer: Toshiba
Category: MOSFETs
Description: MOSFET LowON Res MOSFET ID=.8A VDSS=20V
Datasheet: SSM3K62TU,LF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.1117 ea
Line Total: USD 0.11 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 15 Nov to Thu. 21 Nov
MOQ : 3000
Multiples : 3000
3000 : USD 0.1166
6000 : USD 0.1154
9000 : USD 0.1076
15000 : USD 0.1066
21000 : USD 0.1059
24000 : USD 0.1046
30000 : USD 0.1023
45000 : USD 0.1001

0
Ship by Fri. 15 Nov to Thu. 21 Nov
MOQ : 1
Multiples : 1
1 : USD 0.1117

0
Ship by Fri. 15 Nov to Thu. 21 Nov
MOQ : 3000
Multiples : 3000
3000 : USD 0.1163

0
Ship by Thu. 21 Nov to Mon. 25 Nov
MOQ : 1
Multiples : 1
1 : USD 0.4455
10 : USD 0.3645
100 : USD 0.2387
500 : USD 0.18
1000 : USD 0.1412
3000 : USD 0.1312
6000 : USD 0.12
9000 : USD 0.114
24000 : USD 0.1056

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Transistor Type
Brand
Forward Transconductance - Min
Product Type
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Cnhts
Hts Code
Mxhts
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the SSM3K62TU,LF from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SSM3K62TU,LF and other electronic components in the MOSFETs category and beyond.

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SSM3K62TU MOSFETs Silicon N-Channel MOS SSM3K62TU 1. Applications Power Management Switches DC-DC Converters 2. Features (1) AEC-Q101 qualified (Please see the orderable part number list) (2) 1.2-V drive (3) Low drain-source on-resistance : R = 43 m (typ.) ( V = 4.5 V) DS(ON) GS R = 50 m (typ.) ( V = 2.5 V) DS(ON) GS R = 60 m (typ.) ( V = 1.8 V) DS(ON) GS R = 70 m (typ.) ( V = 1.5 V) DS(ON) GS R = 98 m (typ.) ( V = 1.2 V) DS(ON) GS 3. Packaging and Pin Assignment 1: Gate 2: Source 3: Drain UFM 4. Orderable part number Orderable part number AEC-Q101 Note SSM3K62TU,LF General Use SSM3K62TU,LXGF YES (Note 1) Unintended Use (Note 1) SSM3K62TU,LXHF YES Automotive Use Note 1: For more information, please contact our sales or use the inquiry form on our website. Start of commercial production 2016-08 2016-2021 2021-05-28 1 Toshiba Electronic Devices & Storage Corporation Rev.4.0SSM3K62TU 5. Absolute Maximum Ratings (Note) (Unless otherwise specified, T = 25 ) a Characteristics Symbol Rating Unit Drain-source voltage V 20 V DSS Gate-source voltage V 8 GSS Drain current (DC) (Note 1) I 0.8 A D Drain current (pulsed) (Note 1), (Note 2) I 1.6 DP Power dissipation (Note 3) P 500 mW D Power dissipation (t < 1s) (Note 3) P 1000 mW D Channel temperature T 150 ch Storage temperature T -55 to 150 stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Ensure that the channel temperature does not exceed 150 . Note 2: Pulse width (PW) 10 ms, duty 1% Note 3: Device mounted on an FR4 board. (FR4, 25.4 mm 25.4 mm 1.6 mm, Cu pad: 645 mm2) Note: The MOSFETs in this device are sensitive to electrostatic discharge. When handling this device, the worktables, operators, soldering irons and other objects should be protected against anti-static discharge. Note: The channel-to-ambient thermal resistance, R , and the drain power dissipation, P , vary according to th(ch-a) D the board material, board area, board thickness and pad area. When using this device, be sure to take heat dissipation fully into account. 2016-2021 2021-05-28 2 Toshiba Electronic Devices & Storage Corporation Rev.4.0

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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