X-On Electronics has gained recognition as a prominent supplier of SSM3K341TU,LF MOSFETs across the USA, India, Europe, Australia, and various other global locations. SSM3K341TU,LF MOSFETs are a product manufactured by Toshiba. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SSM3K341TU,LF Toshiba

SSM3K341TU,LF electronic component of Toshiba
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Part No.SSM3K341TU,LF
Manufacturer: Toshiba
Category: MOSFETs
Description: MOSFET LowON Res MOSFET ID=6A VDSS=60V
Datasheet: SSM3K341TU,LF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.2034 ea
Line Total: USD 0.2 
Availability - 1582
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1582
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 1
Multiples : 1
1 : USD 0.2034
10 : USD 0.1955
25 : USD 0.1949
100 : USD 0.1763
250 : USD 0.1756
500 : USD 0.1626
1000 : USD 0.1584

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Transistor Type
Brand
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Cnhts
Hts Code
Mxhts
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the SSM3K341TU,LF from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SSM3K341TU,LF and other electronic components in the MOSFETs category and beyond.

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SSM3K341TU MOSFETs Silicon N-channel MOS (U-MOS-H) SSM3K341TU 1. Applications Power Management Switches DC-DC Converters 2. Features (1) AEC-Q101 qualified (Please see the orderable part number list) (2) 175 MOSFET (3) 4.0 V drive (4) Low drain-source on-resistance : R = 28 m (typ.) ( V = 10 V) DS(ON) GS R = 36 m (typ.) ( V = 4.5 V) DS(ON) GS R = 43 m (typ.) ( V = 4 V) DS(ON) GS 3. Packaging and Internal Circuit 1: Gate 2: Source 3: Drain UFM 4. Orderable part number Orderable part number AEC-Q101 Note SSM3K341TU,LF General Use SSM3K341TU,LXGF YES (Note 1) Unintended Use (Note 1) SSM3K341TU,LXHF YES Automotive Use Note 1: For more information, please contact our sales or use the inquiry form on our website. Start of commercial production 2016-12 2016-2021 2021-01-15 1 Toshiba Electronic Devices & Storage Corporation Rev.9.0SSM3K341TU 5. Absolute Maximum Ratings (Note) (Unless otherwise specified, T = 25 ) a Characteristics Symbol Rating Unit Drain-source voltage V 60 V DSS Gate-source voltage V 20 GSS Drain current (DC) (Note 1) I 6 A D Drain current (pulsed) (Note 1), (Note 2) I 24 DP Power dissipation (Note 3) P 1.0 W D Power dissipation (t = 10 s) (Note 3) P 1.8 D Single-pulse avalanche energy (Note 4) E 28.9 mJ AS Avalanche current I 6 A AR Channel temperature (Note 5) T 175 ch Storage temperature (Note 5) T -55 to 175 stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Ensure that the channel temperature does not exceed 175 . Note 2: pulse width 1 ms, Duty 1 % Note 3: Device mounted on a 25.4 mm 25.4 mm 1.6 mm FR4 glass epoxy board (Cu pad: 645 mm2) Note 4: V = 25 V, T = 25 (Initial state), L = 1 mH, R = 25 DD ch G Note 5: The definitions of the absolute maximum channel and storage temperatures are qualified per AEC-Q101. Note: This transistor is sensitive to electrostatic discharge and should be handled with care. Note: The MOSFETs in this device are sensitive to electrostatic discharge. When handling this device, the worktables, operators, soldering irons and other objects should be protected against anti-static discharge. Note: The channel-to-ambient thermal resistance, R , and the drain power dissipation, P , vary according to th(ch-a) D the board material, board area, board thickness and pad area. When using this device, be sure to take heat dissipation fully into account. 2016-2021 2021-01-15 2 Toshiba Electronic Devices & Storage Corporation Rev.9.0

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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