X-On Electronics has gained recognition as a prominent supplier of SSM3K16CTC,L3F MOSFETs across the USA, India, Europe, Australia, and various other global locations. SSM3K16CTC,L3F MOSFETs are a product manufactured by Toshiba. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SSM3K16CTC,L3F Toshiba

SSM3K16CTC,L3F electronic component of Toshiba
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Part No.SSM3K16CTC,L3F
Manufacturer: Toshiba
Category: MOSFETs
Description: MOSFET LowON Res MOSFET ID=.2A VDSS=20V
Datasheet: SSM3K16CTC,L3F Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
10000: USD 0.0521 ea
Line Total: USD 521 
Availability - 0
MOQ: 10000  Multiples: 10000
Pack Size: 10000
Availability Price Quantity
0
Ship by Fri. 15 Nov to Thu. 21 Nov
MOQ : 10000
Multiples : 10000
10000 : USD 0.0521
20000 : USD 0.0516
30000 : USD 0.0511
40000 : USD 0.0506
50000 : USD 0.05
60000 : USD 0.0495
100000 : USD 0.049
150000 : USD 0.0485
200000 : USD 0.0481

0
Ship by Thu. 21 Nov to Mon. 25 Nov
MOQ : 1
Multiples : 1
1 : USD 0.3767
10 : USD 0.3051
100 : USD 0.1586
500 : USD 0.0963
1000 : USD 0.0612
2500 : USD 0.06
5000 : USD 0.0538
10000 : USD 0.0444
20000 : USD 0.042

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Transistor Type
Brand
Forward Transconductance - Min
Product Type
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Cnhts
Hts Code
Mxhts
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the SSM3K16CTC,L3F from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SSM3K16CTC,L3F and other electronic components in the MOSFETs category and beyond.

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SSM3K16CTC MOSFETs Silicon N-Channel MOS SSM3K16CTCSSM3K16CTCSSM3K16CTCSSM3K16CTC 1. 1. ApplicationsApplications 1. 1. ApplicationsApplications High-Speed Switching Analog Switches 2. 2. 2. 2. FeaturesFeaturesFeaturesFeatures (1) 1.5 V gate drive voltage. (2) Low drain-source on-resistance : R = 5.6 (max) ( V = 1.5 V) DS(ON) GS R = 4.0 (max) ( V = 1.8 V) DS(ON) GS R = 3.0 (max) ( V = 2.5 V) DS(ON) GS R = 2.2 (max) ( V = 4.5 V) DS(ON) GS 3. 3. Packaging and Pin AssignmentPackaging and Pin Assignment 3. 3. Packaging and Pin AssignmentPackaging and Pin Assignment CST3C Start of commercial production 2015-12 2016-2017 2017-11-30 1 Toshiba Electronic Devices & Storage Corporation Rev.2.0SSM3K16CTC 4. 4. 4. 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, T = 25 = 25 = 25 = 25 )))) aaaa Characteristics Symbol Rating Unit Drain-source voltage V 20 V DSS Gate-source voltage V 10 V GSS Drain current (DC) (Note 1) I 200 mA D Drain current (pulsed) (Note 1) I 400 DP Power dissipation (Note 2) P 500 mW D Channel temperature T 150 ch Storage temperature T -55 to 150 stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Ensure that the channel temperature does not exceed 150 . Note 2: Device mounted on a 25.4 mm 25.4 mm 1.6 mm FR4 glass epoxy board (Cu pad: 645 mm2) Note: This transistor is sensitive to electrostatic discharge and should be handled with care. Note: The MOSFETs in this device are sensitive to electrostatic discharge. When handling this device, the worktables, operators, soldering irons and other objects should be protected against anti-static discharge. Note: The channel-to-ambient thermal resistance, R , and the drain power dissipation, P , vary according to th(ch-a) D the board material, board area, board thickness and pad area. When using this device, be sure to take heat dissipation fully into account. 2016-2017 2017-11-30 2 Toshiba Electronic Devices & Storage Corporation Rev.2.0

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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