X-On Electronics has gained recognition as a prominent supplier of SSM3K2615R,LF MOSFETs across the USA, India, Europe, Australia, and various other global locations. SSM3K2615R,LF MOSFETs are a product manufactured by Toshiba. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SSM3K2615R,LF Toshiba

SSM3K2615R,LF electronic component of Toshiba
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Part No.SSM3K2615R,LF
Manufacturer: Toshiba
Category: MOSFETs
Description: N-Channel 60 V 2A (Ta) 1W (Ta) Surface Mount SOT-23F
Datasheet: SSM3K2615R,LF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 0.1781 ea
Line Total: USD 534.3 
Availability - 11640
Ship by Fri. 15 Nov to Thu. 21 Nov
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
11640
Ship by Fri. 15 Nov to Thu. 21 Nov
MOQ : 3000
Multiples : 3000
3000 : USD 0.1781
6000 : USD 0.166
9000 : USD 0.1555

152
Ship by Fri. 15 Nov to Thu. 21 Nov
MOQ : 1
Multiples : 1
1 : USD 0.5193
10 : USD 0.3988
25 : USD 0.3952
100 : USD 0.1799

11640
Ship by Fri. 15 Nov to Thu. 21 Nov
MOQ : 3000
Multiples : 3000
3000 : USD 0.1781
6000 : USD 0.166
9000 : USD 0.1555

152
Ship by Fri. 15 Nov to Thu. 21 Nov
MOQ : 44
Multiples : 1
44 : USD 0.3952
100 : USD 0.1799

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Height
Length
Series
Transistor Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the SSM3K2615R,LF from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SSM3K2615R,LF and other electronic components in the MOSFETs category and beyond.

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SSM3K2615R MOSFETs Silicon N-Channel MOS SSM3K2615RSSM3K2615RSSM3K2615RSSM3K2615R 1. 1. ApplicationsApplications 1. 1. ApplicationsApplications Load Switches Motor Drivers 2. 2. 2. 2. FeaturesFeaturesFeaturesFeatures (1) AEC-Q101 Qualified (Note1). (2) 3.3-V gate drive voltage. (3) Low drain-source on-resistance : R = 380 m (typ.) ( V = 3.3 V, I = 0.5 A) DS(ON) GS D R = 330 m (typ.) ( V = 4.0 V, I = 1.0 A) DS(ON) GS D R = 230 m (typ.) ( V = 10 V, I = 1.0 A) DS(ON) GS D Note1: For detail information, please contact to our sales. 3. 3. Packaging and Pin AssignmentPackaging and Pin Assignment 3. 3. Packaging and Pin AssignmentPackaging and Pin Assignment 1: Gate 2: Source 3: Drain SOT-23F Start of commercial production 2014-10 2015-01-30 1 Rev.2.0SSM3K2615R 4. 4. 4. 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, T = 25 = 25 = 25 = 25 )))) aaaa Characteristics Symbol Rating Unit Drain-source voltage V 60 V DSS Gate-source voltage V 20 GSS Drain current (DC) (Note 1) I 2 A D Drain current (pulsed) (Note 1), (Note 2) I 6 DP Power dissipation (Note 3) P 1 W D Power dissipation (t = 10 s) (Note 3) P 2 D Channel temperature T 150 ch Single-pulse avalanche energy (Note 4) E 52.9 mJ AS Avalanche current I 2 A AR Storage temperature T -55 to 150 stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Ensure that the channel temperature does not exceed 150 . Note 2: Pulse width (PW) 10 s, duty 1% Note 3: Device mounted on an FR4 board. (25.4 mm 25.4 mm 1.6 mm ,Cu pad: 645 mm2) Note 4: V = 25 V, T = 25 (Initial state), L = 20 mH, R = 25, I = 2A DD ch G AR Note: This transistor is sensitive to electrostatic discharge and should be handled with care. Note: The channel-to-ambient thermal resistance, R , and the drain power dissipation, P , vary according to th(ch-a) D the board material, board area, board thickness and pad area. When using this device, be sure to take heat dissipation fully into account. 2015-01-30 2 Rev.2.0

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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