X-On Electronics has gained recognition as a prominent supplier of SSM3K324R,LF(T MOSFETs across the USA, India, Europe, Australia, and various other global locations. SSM3K324R,LF(T MOSFETs are a product manufactured by Toshiba. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SSM3K324R,LF(T Toshiba

SSM3K324R,LF(T electronic component of Toshiba
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See Product Specifications
Part No. SSM3K324R,LF(T
Manufacturer: Toshiba
Category: MOSFETs
Description: MOSFET N Trench 30V 4A 1V @ 1mA 56 mΩ @ 2A,4.5V SOT-23F RoHS
Datasheet: SSM3K324R,LF(T Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
5: USD 0.1932 ea
Line Total: USD 0.97 
Availability - 0
MOQ: 5  Multiples: 5
Pack Size: 5
Availability Price Quantity
0
Ship by Mon. 14 Apr to Fri. 18 Apr
MOQ : 3000
Multiples : 3000
3000 : USD 0.1471
6000 : USD 0.1382

0
Ship by Mon. 14 Apr to Fri. 18 Apr
MOQ : 5
Multiples : 1
5 : USD 0.2214
50 : USD 0.158
100 : USD 0.1028
500 : USD 0.0982
1500 : USD 0.0966

0
Ship by Mon. 21 Apr to Thu. 24 Apr

Multiples : 0

0
Ship by Thu. 10 Apr to Mon. 14 Apr
MOQ : 5
Multiples : 5
5 : USD 0.1932
25 : USD 0.1322
100 : USD 0.1169
155 : USD 0.0966
420 : USD 0.0915

0
Ship by Mon. 14 Apr to Fri. 18 Apr
MOQ : 255
Multiples : 1
255 : USD 0.1651

0
Ship by Mon. 14 Apr to Fri. 18 Apr
MOQ : 145
Multiples : 1
145 : USD 0.2615

0
Ship by Mon. 14 Apr to Fri. 18 Apr
MOQ : 222
Multiples : 222
222 : USD 0.172
500 : USD 0.1471
1000 : USD 0.1394

   
Manufacturer
Product Category
Case
Kind Of Package
Mounting
Polarisation
Features Of Semiconductor Devices
Type Of Transistor
Drain-Source Voltage
Drain Current
Gate-Source Voltage
On-State Resistance
Gate Charge
Power Dissipation
Category
Brand Category
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the SSM3K324R,LF(T from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SSM3K324R,LF(T and other electronic components in the MOSFETs category and beyond.

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SSM3K324R MOSFETs Silicon N-Channel MOS SSM3K324RSSM3K324RSSM3K324RSSM3K324R 1. 1. 1. 1. ApplicationsApplicationsApplicationsApplications Power Management Switches DC-DC Converters 2. 2. FeaturesFeatures 2. 2. FeaturesFeatures (1) 1.8-V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 56 m (max) ( V = 4.5 V) GS RDS(ON) = 72 m (max) ( V = 2.5 V) GS RDS(ON) = 109 m (max) ( V = 1.8 V) GS 3. 3. 3. 3. Packaging and Pin AssignmentPackaging and Pin AssignmentPackaging and Pin AssignmentPackaging and Pin Assignment 1: Gate 2: Source 3: Drain SOT-23F Start of commercial production 2012-10 2014-03-12 1 Rev.2.0SSM3K324R 4. 4. 4. 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, T = 25 = 25 = 25 = 25 )))) aaaa Characteristics Symbol Rating Unit Drain-source voltage V 30 V DSS Gate-source voltage V 12 GSS Drain current (DC) (Note 1) I 4.0 A D Drain current (pulsed) (Note 1), (Note 2) I 10 DP Power dissipation (Note 3) P 1 W D Power dissipation (t 10 s) (Note 3) P 2 D Channel temperature T 150 ch Storage temperature T -50 to 150 stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Ensure that the channel temperature does not exceed 150 . Note 2: Pulse width (PW) 10 ms, duty 1% Note 3: Device mounted on an FR4 board. (25.4 mm 25.4 mm 1.6 mm ,Cu pad: 645 mm2) Note: The MOSFETs in this device are sensitive to electrostatic discharge. When handling this device, the worktables, operators, soldering irons and other objects should be protected against anti-static discharge. Note: The channel-to-ambient thermal resistance, R , and the drain power dissipation, P , vary according to th(ch-a) D the board material, board area, board thickness and pad area. When using this device, be sure to take heat dissipation fully into account. 2014-03-12 2 Rev.2.0

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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