SSM6J207FE TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM6J207FE High-Speed Switching Applications Unit: mm 4 V drive Low ON-resistance: R = 491 m (max) ( V = 4 V) on GS R = 251 m (max) ( V = 10 V) on GS Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Drainsource voltage V -30 V DS Gatesource voltage V 20 V GSS DC I -1.4 D Drain current A Pulse I -2.8 DP P (Note 1) Drain power dissipation 500 mW D Channel temperature T 150 C ch Storage temperature T 55 to 150 C stg 1, 2, 5, 6 : Drain Note: Using continuously under heavy loads (e.g. the application of high 3 : Gate temperature/current/voltage and the significant change in temperature, 4 : Source etc.) may cause this product to decrease in the reliability significantly ES6 even if the operating conditions (i.e. operating temperature/current/ voltage, etc.) are within the absolute maximum ratings. JEDEC Please design the appropriate reliability upon reviewing the Toshiba JEITA Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test TOSHIBA 2-2N1A report and estimated failure rate, etc). Weight: 3 mg (typ.) Note 1: Mounted on an FR4 board 2 (25.4 mm 25.4 mm 1.6 t, Cu Pad: 645 mm ) Electrical Characteristics (Ta = 25C) Characteristic Symbol Test Condition Min Typ. MaxUnit V I = 1 mA, V = 0 30 (BR) DSS D GS Drainsource breakdown voltage V V I = 1 mA, V = + 20 V 15 (BR) DSX D GS Drain cutoff current I V = 30 V, V = 0 1 A DSS DS GS Gate leakage current I V = 16 V, V = 0 1 A GSS GS DS Gate threshold voltage V V = 5 V, I = 1 mA 1.2 2.6 V th DS D Forward transfer admittance Y V = 5 V, I = 0.65 A (Note 2) 0.8 1.5 S fs DS D I = 0.65 A, V = 10 V (Note 2) 191 251 D GS Drainsource ON-resistance R m DS (ON) I = 0.4 A, V = 4 V (Note 2) 371 491 D GS Input capacitance C V = 15 V, V = 0, f = 1 MHz 137 pF iss DS GS Output capacitance C V = 15 V, V = 0, f = 1 MHz 39 pF oss DS GS Reverse transfer capacitance C V = 15 V, V = 0, f = 1 MHz 20 pF rss DS GS Turn-on time t 15 on V = 15 V, I = 0.65 A, DD D Switching time ns V = 0 to 4 V, R = 10 Turn-off time t GS G 14 off Drainsource forward voltage V I = 1.4 A, V = 0 V (Note 2) 0.85 1.2 V DSF D GS Note 2: Pulse test Start of commercial production 2005-12 1 2014-03-01 SSM6J207FE Switching Time Test Circuit (a) Test circuit (b) V IN 0 V OUT 10% 0 IN 90% 4 V R L 4 V 10 s V DD (c) V V OUT DS (ON) 90% V = 15 V DD R = 10 G 10% Duty 1% V DD t t r f V : t , t < 5 ns IN r f Common Source t t on off Ta = 25C Marking Equivalent Circuit (top view) 6 5 4 6 5 4 KT 1 2 3 123 Notice on Usage V can be expressed as the voltage between gate and source when the low operating current value is I = -1 mA for th D this product. For normal switching operation, V requires a higher voltage than V and V requires a lower GS (on) th GS (off) voltage than V . th (The relationship can be established as follows: V < V < V ) GS (off) th GS (on). Take this into consideration when using the device. Handling Precaution When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that come into direct contact with devices should be made of antistatic materials. 2 2014-03-01 R G