X-On Electronics has gained recognition as a prominent supplier of SSM6J207FE,LF MOSFETs across the USA, India, Europe, Australia, and various other global locations. SSM6J207FE,LF MOSFETs are a product manufactured by Toshiba. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SSM6J207FE,LF Toshiba

SSM6J207FE,LF electronic component of Toshiba
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Part No.SSM6J207FE,LF
Manufacturer: Toshiba
Category: MOSFETs
Description: Toshiba MOSFET Small-signal FET 0.491Ohm -1.4A -30V
Datasheet: SSM6J207FE,LF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.2814 ea
Line Total: USD 1.28 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 15 Nov to Thu. 21 Nov
MOQ : 4000
Multiples : 4000
4000 : USD 0.1644
8000 : USD 0.1483
12000 : USD 0.1387
28000 : USD 0.1272
100000 : USD 0.1212

0
Ship by Thu. 21 Nov to Mon. 25 Nov
MOQ : 1
Multiples : 1
1 : USD 1.2814
10 : USD 0.5776
100 : USD 0.2864
500 : USD 0.2151
1000 : USD 0.1816
4000 : USD 0.1471
24000 : USD 0.1426

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Transistor Type
Brand
Factory Pack Quantity :
Configuration
Height
Length
Series
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the SSM6J207FE,LF from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SSM6J207FE,LF and other electronic components in the MOSFETs category and beyond.

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SSM6J207FE TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM6J207FE High-Speed Switching Applications Unit: mm 4 V drive Low ON-resistance: R = 491 m (max) ( V = 4 V) on GS R = 251 m (max) ( V = 10 V) on GS Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Drainsource voltage V -30 V DS Gatesource voltage V 20 V GSS DC I -1.4 D Drain current A Pulse I -2.8 DP P (Note 1) Drain power dissipation 500 mW D Channel temperature T 150 C ch Storage temperature T 55 to 150 C stg 1, 2, 5, 6 : Drain Note: Using continuously under heavy loads (e.g. the application of high 3 : Gate temperature/current/voltage and the significant change in temperature, 4 : Source etc.) may cause this product to decrease in the reliability significantly ES6 even if the operating conditions (i.e. operating temperature/current/ voltage, etc.) are within the absolute maximum ratings. JEDEC Please design the appropriate reliability upon reviewing the Toshiba JEITA Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test TOSHIBA 2-2N1A report and estimated failure rate, etc). Weight: 3 mg (typ.) Note 1: Mounted on an FR4 board 2 (25.4 mm 25.4 mm 1.6 t, Cu Pad: 645 mm ) Electrical Characteristics (Ta = 25C) Characteristic Symbol Test Condition Min Typ. MaxUnit V I = 1 mA, V = 0 30 (BR) DSS D GS Drainsource breakdown voltage V V I = 1 mA, V = + 20 V 15 (BR) DSX D GS Drain cutoff current I V = 30 V, V = 0 1 A DSS DS GS Gate leakage current I V = 16 V, V = 0 1 A GSS GS DS Gate threshold voltage V V = 5 V, I = 1 mA 1.2 2.6 V th DS D Forward transfer admittance Y V = 5 V, I = 0.65 A (Note 2) 0.8 1.5 S fs DS D I = 0.65 A, V = 10 V (Note 2) 191 251 D GS Drainsource ON-resistance R m DS (ON) I = 0.4 A, V = 4 V (Note 2) 371 491 D GS Input capacitance C V = 15 V, V = 0, f = 1 MHz 137 pF iss DS GS Output capacitance C V = 15 V, V = 0, f = 1 MHz 39 pF oss DS GS Reverse transfer capacitance C V = 15 V, V = 0, f = 1 MHz 20 pF rss DS GS Turn-on time t 15 on V = 15 V, I = 0.65 A, DD D Switching time ns V = 0 to 4 V, R = 10 Turn-off time t GS G 14 off Drainsource forward voltage V I = 1.4 A, V = 0 V (Note 2) 0.85 1.2 V DSF D GS Note 2: Pulse test Start of commercial production 2005-12 1 2014-03-01 SSM6J207FE Switching Time Test Circuit (a) Test circuit (b) V IN 0 V OUT 10% 0 IN 90% 4 V R L 4 V 10 s V DD (c) V V OUT DS (ON) 90% V = 15 V DD R = 10 G 10% Duty 1% V DD t t r f V : t , t < 5 ns IN r f Common Source t t on off Ta = 25C Marking Equivalent Circuit (top view) 6 5 4 6 5 4 KT 1 2 3 123 Notice on Usage V can be expressed as the voltage between gate and source when the low operating current value is I = -1 mA for th D this product. For normal switching operation, V requires a higher voltage than V and V requires a lower GS (on) th GS (off) voltage than V . th (The relationship can be established as follows: V < V < V ) GS (off) th GS (on). Take this into consideration when using the device. Handling Precaution When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that come into direct contact with devices should be made of antistatic materials. 2 2014-03-01 R G

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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