SSM6L35FU TOSHIBA Field-Effect Transistor Silicon N / P Channel MOS Type SSM6L35FU High-Speed Switching Applications Unit: mm Analog Switch Applications N-ch: 1.2-V drive P-ch: 1.2-V drive N-ch, P-ch, 2-in-1 Low ON-resistance Q1 N-ch: R = 20 (max) ( V = 1.2 V) on GS : R = 8 (max) ( V = 1.5 V) on GS : R = 4 (max) ( V = 2.5 V) on GS : R = 3 (max) ( V = 4.0 V) on GS Q2 P-ch: R = 44 (max) ( V = -1.2 V) on GS : R = 22 (max) ( V = -1.5 V) on GS : R = 11 (max) ( V = -2.5 V) on GS : R = 8 (max) ( V = -4.0 V) on GS 1.SOURCE 1 4.SOURCE 2 2.GATE 1 5.GATE 2 Q1 Absolute Maximum Ratings (Ta = 25C) 3.DRAIN 2 6.DRAIN 1 Characteristics Symbol Rating Unit JEDEC - Drainsource voltage V 20 V DSS JEITA - Gatesource voltage V 10 V GSS DC I 180 TOSHIBA 2-2J1C D Drain current mA Pulse I 360 DP Weight: 6.8 mg (typ.) Q2 Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Drainsource voltage V -20 V DSS Gatesource voltage V 10 V GSS DC I -100 D Drain current mA Pulse I -200 DP Absolute Maximum Ratings (Ta = 25 C) (Common to the Q1, Q2) Characteristics Symbol Rating Unit Drain power dissipation P (Note 1) 200 mW D Channel temperature T 150 C ch Storage temperature range T -55 to 150 C stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Total rating Start of commercial production 2008-03 1 2015-09-09 SSM6L35FU Q1 Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current I V = 10 V, V = 0V 10 A GSS GS DS Drainsource breakdown voltage V I = 0.1 mA, V = 0V 20 V (BR) DSS D GS Drain cutoff current I V = 20 V, V = 0V 1 A DSS DS GS Gate threshold voltage V V = 3 V, I = 1 mA 0.4 1.0 V th DS D Forward transfer admittance Y V = 3 V, I = 50 mA (Note 2) 115 mS fs DS D I = 50 mA, V = 4 V (Note 2) 1.5 3 D GS I = 50 mA, V = 2.5 V (Note 2) 2 4 D GS Drainsource ON-resistance R DS (ON) I = 5 mA, V = 1.5 V (Note 2) 3 8 D GS I = 5 mA, V = 1.2 V (Note 2) 5 20 D GS Input capacitance C 9.5 iss Reverse transfer capacitance C V = 3 V, V = 0V, f = 1 MHz 4.1 pF rss DS GS Output capacitance C 9.5 oss Turn-on time t 115 on V = 3 V, I = 50 mA, DD D Switching time ns V = 0 to 2.5 V Turn-off time t GS 300 off Drainsource forward voltage V I = - 180 mA, V = 0V (Note 2) -0.9 -1.2 V DSF D GS Q2 Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current I V = 10 V, V = 0 V 10 A GSS GS DS Drainsource breakdown voltage V I = -0.1 mA, V = 0 V -20 V (BR) DSS D GS Drain cutoff current I V = -20 V, V = 0 V -1 A DSS DS GS Gate threshold voltage V V = -3 V, I = -1 mA -0.4 -1.0 V th DS D Forward transfer admittance Y V = -3 V, I = -50 mA (Note 2) 77 mS fs DS D I = -50 mA, V = -4 V (Note 2) 4.3 8 D GS I = -50 mA, V = -2.5 V (Note 2) 5.6 11 D GS Drainsource ON-resistance R DS (ON) I = -5 mA, V = -1.5 V (Note 2) 8.2 22 D GS I = -2 mA, V = -1.2 V (Note 2) 11 44 D GS Input capacitance C 12.2 iss Reverse transfer capacitance C V = -3 V, V = 0 V, f = 1 MHz 6.5 pF rss DS GS Output capacitance C 10.4 oss Turn-on time t 175 on V = -3 V, I = -50 mA, DD D Switching time ns V = 0 to -2.5 V Turn-off time t GS 251 off Drainsource forward voltage V I = 100 mA, V = 0 V (Note 2) 0.83 V DSF D GS 1.2 Note 2: Pulse test Marking Equivalent Circuit (top view) 6 5 4 6 5 4 Q1 LL3 Q2 1 2 3 1 2 3 2 2015-09-09