SSM6L40TU TOSHIBA Field-Effect Transistor Silicon N / P Channel MOS Type SSM6L40TU Power Management Switch Applications High-Speed Switching Applications Unit: mm 2.10.1 N-ch: 4.0-V drive 1.70.1 P-ch: 4.0 -V drive N-ch, P-ch, 2-in-1 Low ON-resistance Q1 N-ch: R = 182 m (max) ( V = 4 V) 1 6 on GS R = 122 m (max) ( V = 10 V) on GS 2 5 Q2 P-ch: R = 403 m (max) ( V = -4 V) on GS R = 226 m (max) ( V = -10 V) on GS 3 4 Q1 = Absolute Maximum Ratings (Ta 25C) Characteristics Symbol Rating Unit Drain-source voltage V 30 V DSS Gate-source voltage V 20 V GSS 1.Source1 4.Source2 DC I 1.6 D 2.Gate1 5.Gate2 Drain current A 3.Drain2 6.Drain1 Pulse I 3.2 DP Q2 Absolute Maximum Ratings (Ta = 25C) UF6 JEDEC Characteristics Symbol Rating Unit JEITA Drain-source voltage V 30 V DSS TOSHIBA 2-2T1B Gate-source voltage V 20 V GSS DC I 1.4 D Weight: 7.0 mg (typ.) Drain current A Pulse I 2.8 DP Absolute Maximum Ratings (Ta = 25 C) (Q1, Q2 Common) Characteristics Symbol Rating Unit Drain power dissipation P (Note 1) 500 mW D Channel temperature T 150 C ch Storage temperature range T 55 to 150 C stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note1: Mounted on an FR4 board. (total dissipation) 2 (25.4 mm 25.4 mm 1.6 mm, Cu Pad : 645 mm ) Marking Equivalent Circuit (top view) 6 4 5 6 5 4 Q1 Q2 LL2 Start of commercial production 1 2 3 1 2 3 2008-02 1 2014-03-01 2.00.1 1.30.1 0.70.05 0.65 0.65 0.1660.05 +0.1 0.3-0.05SSM6L40TU Q1 Electrical Characteristics = (Ta 25C) Characteristics Symbol Test Conditions Min Typ. MaxUnit V I = 1 mA, V = 0 V 30 (BR) DSS D GS Drain-source breakdown voltage V V I = 1 mA, V = -20 V 15 (BR) DSX D GS Drain cutoff current I V =30 V, V = 0 V 1 A DSS DS GS Gate leakage current I V = 16 V, V = 0 V 1 A GSS GS DS Gate threshold voltage V V = 5 V, I = 1 mA 1.0 2.6 V th DS D Forward transfer admittance Y V = 5 V, I = 1A (Note 2) 1.9 3.7 S fs DS D I = 1 A, V = 10 V (Note 2) 96 122 D GS Drain-source ON-resistance R m DS (ON) I = 0.5 A, V = 4 V (Note 2) 130 182 D GS Input capacitance C 180 iss Output capacitance C V = 15 V, V = 0 V, f = 1 MHz 34 pF DS GS oss Reverse transfer capacitance C 27 rss Total Gate Charge Q 5.1 g GateSource Charge Q V = 15 V, I = 1.6 A, V = 10 V 3.9 nC DS D GS gs GateDrain Charge Q 1.2 gd Turn-on time t 9.5 on V = 15 V, I = 0.5 A DD D Switching time ns V = 0 to 4 V, R = 10 GS G Turn-off time t 9.0 off Drain-source forward voltage V I = -1.6 A, V = 0 V (Note 2) -0.8 V -1.2 DSF D GS Q2 Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Conditions Min Typ. Max Unit V I = -1 mA, V = 0 V -30 (BR) DSS D GS Drain-source breakdown voltage V V I = -1 mA, V = +20 V -15 (BR) DSX D GS Drain cutoff current I V = -30 V, V = 0 V -10 A DSS DS GS Gate leakage current I V = 16 V, V = 0 V 1 A GSS GS DS Gate threshold voltage V V = -5 V, I = -1 mA -0.8 -2.0 V th DS D Forward transfer admittance Y V = -5 V, I = -1 A (Note 2) 1.0 2.0 S fs DS D I = -1.0 A, V = -10 V (Note 2) 175 226 D GS Drain-source ON-resistance R m DS (ON) I = -0.5 A, V = -4.0 V (Note 2) 290 403 D GS Input capacitance C 120 iss V = -15 V, V = 0 V, f = 1 MHz pF Output capacitance C 32 oss DS GS Reverse transfer capacitance C 21 rss Total Gate Charge Q 2.9 g V = -15 V, I = -1.4 A, V = -10 V nC GateSource Charge Q 2.2 gs DS D GS GateDrain Charge Q 0.7 gd Turn-on time t 12 on V = -15 V, I = -1 A, DD D Switching time ns V = 0 to -4 V, R = 10 GS G Turn-off time t 8.5 off Drain-source forward voltage V I = 1.4 A, V = 0 V (Note 2) 0.87 1.2 V DSF D GS Note 2: Pulse test 2 2014-03-01