SSM6N43FU TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type SSM6N43FU High-Speed Switching Applications Unit: mm 1.5-V drive Low ON-resistance : R = 1.52 (max) ( V = 1.5V) DS(ON) GS : R = 1.14 (max) ( V = 1.8V) DS(ON) GS : R = 0.85 (max) ( V = 2.5V) DS(ON) GS : R = 0.66 (max) ( V = 4.5V) DS(ON) GS : R = 0.63 (max) ( V = 5.0V) DS(ON) GS Absolute Maximum Ratings (Ta = 25C) (Q1,Q2 Common) Characteristic Symbol Rating Unit Drain-source voltage V 20 V DSS Gate-source voltage V 10 V GSS DC I 500 D Drain current mA Pulse I 1000 1.SOURCE1 4.SOURCE2 DP 2.GATE1 5.GATE2 Drain power dissipation P (Note1) 200 mW D 3.DRAIN2 6.DRAIN1 Channel temperature T 150 C ch US6 Storage temperature range T 55 to 150 C stg JEDEC Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in JEITA temperature, etc.) may cause this product to decrease in the TOSHIBA 2-2J1C reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the Weight: 6.8 mg (typ.) absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Total rating Marking Equivalent Circuit (top view) 6 5 4 65 4 Q1 Q2 N S 1 2 3 12 3 Start of commercial production 2009-05 1 2014-03-01 SSM6N43FU Electrical Characteristics (Ta = 25C) (Q1, Q2 Common) Characteristics Symbol Test Condition Min Typ. Max Unit V I = 1 mA, V = 0 V 20 (BR) DSS D GS Drain-Source breakdown voltage V V I = 1 mA, V = - 10 V 12 (BR) DSX D GS Drain cut-off current I V = 20 V, V = 0 V 1 A DSS DS GS Gate leakage current I V = 8 V, V = 0 V 1 A GSS GS DS Gate threshold voltage V V = 3 V, I = 1 mA 0.35 1.0 V th DS D Forward transfer admittance Y V = 3 V, I = 200 mA (Note2) 420 840 mS fs DS D I = 200 mA, V = 5.0 V (Note2) 0.46 0.63 D GS I = 200 mA, V = 4.5 V (Note2) 0.51 0.66 D GS Drain-Source ON resistance R I = 200 mA, V = 2.5 V (Note2) 0.66 0.85 DS (ON) D GS I = 100 mA, V = 1.8 V (Note2) 0.81 1.14 D GS I = 50 mA, V = 1.5 V (Note2) 0.95 1.52 D GS Input capacitance C 46 iss Output capacitance C V = 10 V, V = 0 V, f = 1 MHz 10.8 pF oss DS GS Reverse transfer capacitance C 7.3 rss Total Gate Charge Q 1.23 g V = 10 V, I = 0.5 A DD D GateSource Charge Q 0.60 nC gs V = 4.0 V GS Q GateDrain Charge 0.63 gd Turn-on time t 30 on V = 10 V, I = 200 mA DD D Switching time ns V = 0 to 2.5 V, R = 50 Turn-off time t GS G 75 off Drain-source forward voltage V I = -0.5 A, V = 0 V (Note2) -0.88 -1.2 V DSF D GS Note2: Pulse test Switching Time Test Circuit (a) Test Circuit (b) V IN 2.5 V 90% V = 10 V DD 2.5 V OUT R = 50 G 10% IN 0 V Duty 1% 0 V : t , t < 5 ns IN r f V DD Common Source (c) V 90% OUT 10 s Ta = 25C 10% V DD V DS (ON) t t r f t t on off Usage Considerations Let V be the voltage applied between gate and source that causes the drain current (I ) to below (1 mA for the th D SSM6N43FU). Then, for normal switching operation, V must be higher than V and V must be lower than GS(on) th, GS(off) V This relationship can be expressed as: V < V < V th. GS(off) th GS(on). Take this into consideration when using the device. Handling Precaution When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that come into direct contact with devices should be made of antistatic materials. 2 2014-03-01 R G