CMPDM203NH SURFACE MOUNT www.centralsemi.com N-CHANNEL DESCRIPTION: ENHANCEMENT-MODE The CENTRAL SEMICONDUCTOR CMPDM203NH SILICON MOSFET is a High Current N-Channel Enhancement-mode Silicon MOSFET, manufactured by the N-Channel DMOS Process, and is designed for high speed pulsed amplifier and driver applications. This MOSFET offers High Current, Low r , Low Threshold Voltage, DS(ON) and Low Leakage Current. MARKING CODE: 203C SOT-23F CASE FEATURES: APPLICATIONS: Low r (0.07 MAX V =2.5V) Load/Power switches DS(ON) GS Power supply converter circuits High current (I =3.2A) D Battery powered portable equipment Logic level compatibility MAXIMUM RATINGS: (T =25C) SYMBOL UNITS A Drain-Source Voltage V 20 V DS Gate-Source Voltage V 12 V GS Continuous Drain Current (Steady State) I 3.2 A D Maximum Pulsed Drain Current, tp=10s I 12.8 A DM Power Dissipation P 350 mW D Operating and Storage Junction Temperature T , T -55 to +150 C J stg Thermal Resistance 357 C/W JA ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted) A SYMBOL TEST CONDITIONS MIN TYP MAX UNITS I , I V =12V, V=0 10 A GSSF GSSR GS DS I V =20V, V=0 1.0 A DSS DS GS BV V =0, I=250A 20 V DSS GS D V V =V , I=250A 0.6 1.2 V GS(th) GS DS D r V =4.5V, I=1.6A 0.033 0.05 DS(ON) GS D r V =2.5V, I=1.6A 0.046 0.07 DS(ON) GS D g V =5.0V, I=3.2A 10.5 S FS DS D C V =10V, V =0, f=1.0MHz 44 pF rss DS GS C V =10V, V =0, f=1.0MHz 395 pF iss DS GS C V =10V, V =0, f=1.0MHz 97 pF oss DS GS Q V =10V, V =4.5V, I=3.2A 6.8 10 nC g(tot) DD GS D Q V =10V, V =4.5V, I=3.2A 0.8 1.2 nC gs DD GS D Q V =10V, V =4.5V, I=3.2A 0.9 1.1 nC gd DD GS D t V =10V, I =3.2A, R=10 6.0 ns on DD D G t V =10V, I =3.2A, R =10 22.8 ns off DD D G R0 (20-October 2010)CMPDM203NH SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET SOT-23F CASE - MECHANICAL OUTLINE 21 3 PIN CONFIGURATION LEAD CODE: 1) Gate 2) Source 3) Drain MARKING CODE: 203C R0 (20-October 2010) www.centralsemi.com