X-On Electronics has gained recognition as a prominent supplier of SSM6N67NU,LF MOSFETs across the USA, India, Europe, Australia, and various other global locations. SSM6N67NU,LF MOSFETs are a product manufactured by Toshiba. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SSM6N67NU,LF Toshiba

SSM6N67NU,LF electronic component of Toshiba
SSM6N67NU,LF Toshiba
SSM6N67NU,LF MOSFETs
SSM6N67NU,LF  Semiconductors

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See Product Specifications
Part No. SSM6N67NU,LF
Manufacturer: Toshiba
Category: MOSFETs
Description: MOSFET LowON Res MOSFET ID=4A VDSS=30V
Datasheet: SSM6N67NU,LF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 0.1701 ea
Line Total: USD 510.3 
Availability - 0
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
0
Ship by Fri. 02 May to Thu. 08 May
MOQ : 3000
Multiples : 3000
3000 : USD 0.1701
6000 : USD 0.165
9000 : USD 0.1634
12000 : USD 0.1618
15000 : USD 0.1601
24000 : USD 0.1579
30000 : USD 0.1564
75000 : USD 0.1548
150000 : USD 0.1532

0
Ship by Wed. 30 Apr to Fri. 02 May
MOQ : 1
Multiples : 1
1 : USD 1.3036
10 : USD 0.5777
100 : USD 0.2868
500 : USD 0.2146
1000 : USD 0.1615
3000 : USD 0.1383

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Series
Brand
Forward Transconductance - Min
Product Type
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Cnhts
Hts Code
Mxhts
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the SSM6N67NU,LF from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SSM6N67NU,LF and other electronic components in the MOSFETs category and beyond.

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SSM6N67NU MOSFETs Silicon N-Channel MOS SSM6N67NUSSM6N67NUSSM6N67NUSSM6N67NU 1. 1. ApplicationsApplications 1. 1. ApplicationsApplications Power Management Switches DC-DC Converters 2. 2. 2. 2. FeaturesFeaturesFeaturesFeatures (1) AEC-Q101 qualified (Note 1) (2) 1.8-V gate drive voltage. (3) Low drain-source on-resistance : R = 39.1 m (max) ( V = 4.5 V) DS(ON) GS R = 53 m (max) ( V = 2.5 V) DS(ON) GS R = 82 m (max) ( V = 1.8 V) DS(ON) GS Note 1: For detail information, please contact to our sales. 3. 3. Packaging and Pin AssignmentPackaging and Pin Assignment 3. 3. Packaging and Pin AssignmentPackaging and Pin Assignment 1. Source 1 2. Gate 1 3. Drain 2 4. Source 2 5. Gate 2 6. Drain 1 UDFN6 2017 2017-12-18 1 Toshiba Electronic Devices & Storage Corporation Rev.1.0SSM6N67NU 4. 4. 4. 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, T = 25 = 25 = 25 = 25 )))) aaaa (Q1,Q2 Common)(Q1,Q2 Common)(Q1,Q2 Common)(Q1,Q2 Common) Characteristics Symbol Rating Unit Drain-source voltage V 30 V DSS Gate-source voltage V 12/-8 GSS Drain current (DC) (Note 1) I 4 A D Drain current (pulsed) (Note 1), (Note 2) I 10 DP Power dissipation (Note 3) P 1 W D Power dissipation (t 10 s) (Note 3) P 2 W D Channel temperature T 150 ch Storage temperature T -55 to 150 stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Ensure that the channel temperature does not exceed 150 . Note 2: Pulse width (PW) 10 ms, duty 1 % Note 3: Device mounted on an FR-4 board.(total dissipation) (25.4 mm 25.4 mm 1.6 mm ,Cu pad: 645 mm2) Note: The MOSFETs in this device are sensitive to electrostatic discharge. When handling this device, the worktables, operators, soldering irons and other objects should be protected against anti-static discharge. Note: The channel-to-ambient thermal resistance, R , and the drain power dissipation, P , vary according to th(ch-a) D the board material, board area, board thickness and pad area. When using this device, be sure to take heat dissipation fully into account. 2017 2017-12-18 2 Toshiba Electronic Devices & Storage Corporation Rev.1.0

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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