X-On Electronics has gained recognition as a prominent supplier of SSM6P15FE(TE85L,F) MOSFETs across the USA, India, Europe, Australia, and various other global locations. SSM6P15FE(TE85L,F) MOSFETs are a product manufactured by Toshiba. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SSM6P15FE(TE85L,F) Toshiba

SSM6P15FE(TE85L,F) electronic component of Toshiba
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Part No.SSM6P15FE(TE85L,F)
Manufacturer: Toshiba
Category: MOSFETs
Description: Mosfet Array 2 P-Channel (Dual) 30V 100mA 150mW Surface Mount ES6
Datasheet: SSM6P15FE(TE85L,F) Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
4000: USD 0.1041 ea
Line Total: USD 416.4 
Availability - 0
MOQ: 4000  Multiples: 4000
Pack Size: 4000
Availability Price Quantity
2882
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 1
Multiples : 1
1 : USD 0.2899
10 : USD 0.1733
25 : USD 0.1698
100 : USD 0.1562
250 : USD 0.1425
500 : USD 0.1288
1000 : USD 0.115

2882
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 93
Multiples : 1
93 : USD 0.1698
100 : USD 0.1562
250 : USD 0.1425
500 : USD 0.1288
1000 : USD 0.115

15326
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 232
Multiples : 1
232 : USD 0.1843
1000 : USD 0.1775

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Brand
Factory Pack Quantity :
Configuration
Height
Length
Series
Transistor Type
Width
Forward Transconductance - Min
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the SSM6P15FE(TE85L,F) from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SSM6P15FE(TE85L,F) and other electronic components in the MOSFETs category and beyond.

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SSM6P15FE TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM6P15FE High Speed Switching Applications Analog Switch Applications Unit: mm Small package Low ON resistance : R = 12 (max) ( V = 4 V) on GS : R = 32 (max) ( V = 2.5 V) on GS Absolute Maximum Ratings (Ta = 25C) (Q1, Q2 Common) Characteristics Symbol Rating Unit Drain-Source voltage V 30 V DS Gate-Source voltage V 20 V GSS DC I 100 D Drain current mA Pulse I 200 DP Drain power dissipation (Ta = 25C) P (Note 1) 150 mW D Channel temperature T 150 C ch 1: Source1 Storage temperature range T 55 to 150 C 2: Gate1 stg 3: Drain2 Note: Using continuously under heavy loads (e.g. the application of 4: Source2 high temperature/current/voltage and the significant change in 5: Gate2 temperature, etc.) may cause this product to decrease in the 6: Drain1 reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the JEDEC absolute maximum ratings. JEITA Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling TOSHIBA 2-2N1D Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure Weight: 0.003g(typ.) rate, etc). Note 1: Total rating, mounted on FR4 board 2 (25.4 mm 25.4 mm 1.6 t, Cu Pad: 0.135 mm 6) 0.3 mm Marking Equivalent Circuit (top view) 6 5 4 6 5 4 Q1 D Q Q2 1 2 3 1 2 3 Handling Precaution When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials. Start of commercial production 2002-03 1 2014-03-01 0.45 mm SSM6P15FE Electrical Characteristics (Ta = 25C) (Q1, Q2 common) Characteristic Symbol Test Condition MIN. TYP. MAX.UNIT Gate leakage current I V = 16 V, V = 0 1 A GSS GS DS Drain-Source breakdown voltage V I = 0.1 mA, V = 0 30 V (BR) DSS D GS Drain cut-off current I V = 30 V, V = 0 1 A DSS DS GS Gate threshold voltage V V = 3 V, I = 0.1 mA 1.1 1.7 V th DS D Forward transfer admittance Y V = 3 V, I = 10 mA 20 mS fs DS D I = 10 mA, V = 4 V 8 12 D GS Drain-Source ON resistance R DS (ON) I = 1 mA, V = 2.5 V 14 32 D GS Input capacitance C 9.1 pF iss Reverse transfer capacitance C V = 3 V, V = 0, f = 1 MHz 3.5 pF rss DS GS Output capacitance C 8.6 pF oss Turn-on time t 65 on V = 5 V, I = 10 mA, DD D Switching time ns V = 0 to 5 V GS Turn-off time t 175 off Switching Time Test Circuit (a) Test circuit (b) V IN 0 V OUT 10% 0 IN 90% 5V R 5 V L 10 s V DD (c) V V OUT DS (ON) 90% V = 5 V DD Duty 1% 10% V : t , t < 5 ns V IN r f DD t t r f (Z = 50 ) out Common Source t t on off Ta = 25C Precaution V can be expressed as voltage between gate and source when low operating current value is I = 100 A for this th D product. For normal switching operation, V requires higher voltage than V and V requires lower voltage GS (on) th GS (off) than V . (Relationship can be established as follows: V < V < V ) th GS (off) th GS (on) Please take this into consideration for using the device. 2 2014-03-01 50

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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