SSM6P41FE TOSHIBA Field Effect Transistor Silicon P Channel MOS Type(U-MOS-V) SSM6P41FE Power Management Switches 1.5-V drive Low on-resistance : R = 1.04 (max) ( V = -1.5 V) Unit: mm DS(ON) GS : R = 0.67 (max) ( V = -1.8 V) DS(ON) GS 1.60.05 : R = 0.44 (max) ( V = -2.5 V) DS(ON) GS 1.20.05 : R = 0.30 (max) ( V = -4.5 V) DS(ON) GS 1 6 Absolute Maximum Ratings (Ta = 25 C) (Q1, Q2 Common) 2 5 Characteristic Symbol Rating Unit 3 4 Drain-source voltage V -20 V DSS Gate-source voltage V 8 V GSS DC I -720 D Drain current mA Pulse I -1440 DP Power dissipation P (Note1) 150 mW D Channel temperature T 150 C ch 1.Source1 4.Source2 T 55 to 150 C Storage temperature range stg 2.Gate1 5.Gate2 3.Drain2 6.Drain1 ES6 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the JEDEC reliability significantly even if the operating conditions (i.e. JEITA operating temperature/current/voltage, etc.) are within the absolute maximum ratings. TOSHIBA 2-2N1D Please design the appropriate reliability upon reviewing the Weight: 3.0 mg (typ.) Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Total rating Mounted on an FR4 board 2 (25.4 mm 25.4 mm 1.6 mm, Cu Pad: 0.135 mm 6) Marking Equivalent Circuit (top view) 6 5 4 65 4 Q1 PP3 Q2 1 2 3 12 3 Handling Precaution When handling individual devices (which are not yet mounted on a circuit board), ensure that the environment is protected against static electricity. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials. Start of commercial production 2009-04 1 2014-03-01 1.60.05 0.550.05 1.00.05 0.5 0.5 0.120.05 0.20.05SSM6P41FE Electrical Characteristics (Ta = 25C) (Q1, Q2 Common) Characteristics Symbol Test Conditions Min. Typ. Max. Unit V I = -1 mA, V = 0 V -20 (BR) DSS D GS Drain-source breakdown voltage V V I = -1 mA, V = 8 V -12 (BR) DSX D GS Drain cutoff current I V = -20 V, V = 0 V -10 A DSS DS GS Gate leakage current I V = 8 V, V = 0 V 1 A GSS GS DS Gate threshold voltage V V = -3 V, I = -1 mA -0.3 -1.0 V th DS D Forward transfer admittance Y V = -3 V, I = -400 mA (Note2) 850 mS fs DS D I = -400 mA, V = -4.5 V (Note2) 0.25 0.30 D GS I = -200 mA, V = -2.5 V (Note2) 0.34 0.44 D GS Drain-source on-resistance R DS (ON) I = -100 mA, V = -1.8 V (Note2) 0.44 0.67 D GS I = -50 mA, V = -1.5 V (Note2) 0.55 1.04 D GS Input capacitance C 110 iss Output capacitance C V = -10 V, V = 0 V, f = 1 MHz 28 pF DS GS oss Reverse transfer capacitance C 20 rss Total Gate Charge Q 1.76 g V = -10 V, I = -720 mA DD D GateSource Charge Q 1.22 nC gs V = -4.5 V GS GateDrain Charge Q 0.54 gd Turn-on time t 11 on V = -10 V, I = -100 mA DD D Switching time ns V = 0 to -2.5 V, R = 50 Turn-off time t GS G 38 off Drain-source forward voltage V I = 720 mA, V = 0 V (Note2) 0.85 1.2 V DSF D GS Note2: Pulse test Switching Time Test Circuit (a) Test circuit (b) V IN 0 V 90% OUT 0 IN 10% 2.5 V 2.5V R L V 10 s DS (ON) V DD 90% (c) V OUT V = 10 V DD R = 50 G 10% V DD Duty 1% t t r f V : t , t < 5 ns IN r f (Z = 50 ) out t t on off Common Source Ta = 25C Precaution Let V be the voltage applied between gate and source that causes the drain current (I ) to be low (-1mA for the th D SSM6P41FE). Then, for normal switching operation, V must be higher than V and V must be lower than GS(on) th, GS(off) V This relationship can be expressed as: V < V < V th. GS(off) th GS(on). Take this into consideration when using the device. 2 2014-03-01 R G