Preliminary Technical Information TM V = 75V TrenchT2 IXTA230N075T2-7 DSS I = 230A Power MOSFET D25 R 4.2m DS(on) N-Channel Enhancement Mode Avalanche Rated TO-263 (7-lead) Symbol Test Conditions Maximum Ratings 1 V T = 25C to 175C75 V DSS J 7 V T = 25C to 175C, R = 1M 75 V DGR J GS (TAB) V Transient 20 V GSM Pins: 1 - Gate I T = 25C 230 A D25 C 2, 3 - Source I Lead Current Limit, RMS 160 A LRMS 5,6,7 - Source I T = 25C, pulse width limited by T 700 A DM C JM TAB (8) - Drain I T = 25C 115 A A C E T = 25C 850 mJ AS C P T = 25C 480 W D C T -55 ... +175 C Features J T 175 C JM z International standard package T -55 ... +175 C stg z 175C Operating Temperature z T 1.6mm (0.062in.) from case for 10s 300 C High current handling capability L T Plastic body for 10 seconds 260 C z sold Avalanche rated z Low R Weight TO-263 3 g DS(on) Advantages z Easy to mount z Space savings z High power density Symbol Test Conditions Characteristic Values (T = 25C unless otherwise specified) Min. Typ. Max. J Applications BV V = 0V, I = 250A 75 V DSS GS D z Automotive V V = V , I = 250A 2.0 4.0 V GS(th) DS GS D - Motor Drives I V = 20V, V = 0V 200 nA - 12V Battery GSS GS DS - ABS Systems I V = V 5 A z DSS DS DSS DC/DC Converters and Off-line UPS z V = 0V T = 150C 150 A Primary- Side Switch GS J z High Current Switching Applications R V = 10V, I = 50A, Notes 1, 2 4.2 m DS(on) GS D 2008 IXYS CORPORATION, All rights reserved DS100070(11/08)IXTA230N075T2-7 Symbol Test Conditions Characteristic Values TO-263 (7-lead) (IXTA..7) Outline (T = 25C, unless otherwise specified) Min. Typ. Max. J g V = 10V, I = 60A, Note 1 50 85 S fs DS D C 10.5 nF iss C V = 0V, V = 25V, f = 1MHz 1165 pF oss GS DS C 125 pF rss t 23 ns d(on) Resistive Switching Times t 18 ns r V = 10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 33 ns R = 2 (External) d(off) G t 15 ns f Q 178 nC g(on) Q V = 10V, V = 0.5 V , I = 0.5 I 53 nC gs GS DS DSS D D25 Q 41 nC Pins: 1 - Gate gd 2, 3 - Source R 0.31 C/W 4 - Drain thJC 5,6,7 - Source Tab (8) - Drain Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25C, unless otherwise specified) Min. Typ. Max. J I V = 0V 230 A GS S I Repetitive, Pulse width limited by T 900 A SM JM V I = 100A, V = 0V, Note 1 1.3 V SD F GS t 66 ns I = 115A, V = 0V rr F GS I 4.4 A -di/dt = 100A/s RM V = 37V Q 145 nC R RM Notes: 1. Pulse test, t 300s duty cycle, d 2%. 2. On through-hole packages, R Kelvin test contact DS(on) location must be 5mm or less from the package body. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537