SSM6P47NU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type(U-MOS VI) SSM6P47NU Power Management Switch Applications Unit: mm 2.0 0.1 B 1.5V drive A Low ON-resistance: R = 242 m (max) ( V = -1.5 V) DS( on) GS R = 170 m (max) ( V = -1.8 V) DS( on) GS R = 125 m (max) ( V = -2.5 V) DS(on) GS R = 95 m (max) ( V = -4.5 V) DS( on) GS 00.05 Absolute Maximum Ratings (Ta = 25C) 0.13 (Q1, Q2 Common) *BOTTOM VIEW 0.65 0.65 0.95 Characteristics Symbol Rating Unit 1 23 Drain-Source voltage V 20 V DSS Gate-Source voltage V 8 V GSS DC I 4.0 D Drain current A 6 54 Pulse I (Note 1) 8.0 DP 0.3 0.075 0.05 M A B P 1 0.650.075 0.650.075 0.05 M A B D Power dissipation (Note 2) W 1. Source1 4. Source2 t < 10s 2 2. Gate1 5. Gate2 Channel temperature Tch 150 C 3. Drain2 6. Drain1 UDFN6 Storage temperature T 55 to 125 C stg JEDEC Note: Using continuously under heavy loads (e.g. the application of JEITA high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the TOSHIBA 2-2Y1A reliability significantly even if the operating conditions (i.e. Weight: 8.5 mg (typ.) operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: The channel temperature should not exceed 150 C during use. Note 2: Total rating Mounted on an FR4 board. 2 (25.4 mm 25.4 mm 1.6 mm, Cu Pad: 645 mm ) Marking(Top View) Equivalent Circuit(Top View) Pin Condition(Top View) 6 5 4 D1 G2 S2 6 5 4 Q1 PP4 D1 D2 Q2 S1 G1 D2 1 2 3 3 1 2 Polarity marking Polarity marking (on the top) *Electrodes : on the bottom Start of commercial production 2010-06 1 2014-03-01 0.86 0.86 0.750.05 2.00.1 0.2750.1 0.90.075 0.2750.1SSM6P47NU Electrical Characteristics (Ta = 25C) (Q1, Q2 Common) Characteristic Symbol Test Conditions Min Typ. MaxUnit V I = -1 mA, V = 0 V -20 (BR) DSS D GS Drain-Source breakdown voltage V V I = -1 mA, V = 5 V (Note 4) -15 (BR) DSX D GS Drain cut-off current I V = -20 V, V = 0 V -1 A DSS DS GS Gate leakage current I V = 8 V, V = 0 V 1 A GSS GS DS Gate threshold voltage V V = -3 V, I = -1 mA -0.3 -1.0 V th DS D Forward transfer admittance Y V = -3 V, I = -1.0 A (Note 3) 2.8 5.6 S fs DS D I = -1.5 A, V = -4.5 V (Note 3) 80.5 95 D GS I = -1.0 A, V = -2.5 V (Note 3) 99.5 125 D GS Drainsource ON-resistance R m DS (ON) I = -0.5 A, V = -1.8 V (Note 3) 122 170 D GS I = -0.25 A, V = -1.5 V (Note 3) 143 242 D GS Input capacitance C 290 iss Output capacitance V = -10 V, V = 0 V, f = 1 MHz pF C 44 oss DS GS Reverse transfer capacitance C 32 rss Total Gate Charge Q 4.6 g V = 10 V, I = 3.5 A DD D Gate-Source Charge Q 0.5 nC gs1 V = 4.5 V GS Gate-Drain Charge Q 1.2 gd Turn-on time t 12.0 on V = -10 V, I = -0.5 A, DD D Switching time ns V = 0 to -2.5 V, R = 4.7 GS G Turn-off time t 46.2 off V Drain-Source forward voltage I = 4.0 A, V = 0 V (Note 3) 0.9 1.2 V DSF D GS Note 3: Pulse test Note 4: If a forward bias is applied between gate and source, this device enters V(BR)DSX mode. Note that the drain-source breakdown voltage is lowered in this mode. Switching Time Test Circuit (a) Test circuit (b) V IN 0 V 90% V = 10 V DD 0 OUT R = 4.7 10% G IN 2.5 V Duty 1% 2.5 V V : t , t < 5 ns IN r f V DS (ON) Common source 90% 10 s (c) V Ta = 25C OUT 10% V DD V DD t t r f t t on off Notice on Usage Let V be the voltage applied between gate and source that causes the drain current (I ) to be low (-1 mA for the th D SSM6P47NU). Then, for normal switching operation, V must be higher than V and V must be lower than GS(on) th, GS(off) V This relationship can be expressed as: V < V < V . th. GS(off) th GS(on) Take this into consideration when using the device. Handling Precaution When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that come into direct contact with devices should be made of antistatic materials. Thermal resistance R and power dissipation P vary depending on board material, board area, board thickness th (ch-a) D and pad area. When using this device, please take heat dissipation into consideration. 2 2014-03-01 R G