SSM6P54TU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM6P54TU High-Speed Switching Applications Unit : mm Power Management Switch Applications 2.10.1 1.5 V drive 1.70.1 Suitable for high-density mounting due to compact package Low on-resistance : R = 228 m (max) ( V = -2.5 V) on GS : R = 350 m (max) ( V = -1.8 V) 1 6 on GS : R = 555 m (max) ( V = -1.5 V) on GS 5 2 Absolute Maximum Ratings (Ta = 25C) 4 3 Characteristics Symbol Rating Unit Drain-Source voltage V -20 V DS Gate-Source voltage V 8 V GSS DC I -1.2 D Drain current A Pulse I -2.4 DP Drain power dissipation P (Note 1) 500 mW 1.Sorce1 4.Source 2 D 2.Gate1 5.Gate2 Channel temperature T 150 C ch 3.Drain2 6.Drain1 Storage temperature range T 55 to 150 C stg Note: Using continuously under heavy loads (e.g. the application of high UF6 temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly JEDEC even if the operating conditions (i.e. operating temperature/current/ voltage, etc.) are within the absolute maximum ratings. JEITA Please design the appropriate reliability upon reviewing the Toshiba TOSHIBA 2-2T1B Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test Weight: 7.0 mg (typ.) report and estimated failure rate, etc). Note 1: Mounted on an FR4 board. 2 (25.4 mm 25.4 mm 1.6 t, Cu Pad: 645 mm ) Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. Max Unit V I = 1 mA, V = 0 20 (BR) DSS D GS Drain-Source breakdown voltage V V I = 1 mA, V = +8 V 12 (BR) DSX D GS Drain cut-off current I V = 20 V, V = 0 10 A DSS DS GS Gate leakage current I V = 8 V, V = 0 1 A GSS GS DS Gate threshold voltage V V = 3 V, I = 1 mA 0.3 1.0 V th DS D Forward transfer admittance Y V = -3 V, I = -0.6 A (Note 2) 1.7 3.4 S fs DS D I = -0.6 A, V = -2.5 V (Note 2) 162 228 D GS Drain-Source on-resistance R I = -0.6 A, V = -1.8 V (Note 2) 212 350 m DS (ON) D GS I = -0.1 A, V = -1.5 V (Note 2) 249 555 D GS Input capacitance C 331 iss V = 10 V, V = 0 DS GS Output capacitance C 48 pF oss f = 1 MHz Reverse transfer capacitance C 39 rss Turn-on time t V = 10 V, I = 0.6 A 19 on DD D Switching time ns Turn-off time t V = 0 ~ 2.5 V, R = 4.7 18 GS G off Total gate charge Q 7.7 g V = 16 V, I = -1.2 A, DS DS nC Gate-Source charge Q 4.9 gs V = 4 V GS Gate-Drain charge Q 2.8 gd Drain-Source forward voltage V I = 1.2 A, V = 0 (Note 2) 0.8 1.2 V DSF D GS Note 2: Pulse test Start of commercial production 2005-08 1 2014-03-01 2.00.1 1.30.1 0.70.05 0.65 0.65 +0.06 0.16-0.05 +0.1 0.3-0.05SSM6P54TU Switching Time Test Circuit (a) Test Circuit (b) V IN 0 V 10% OUT 0 IN 90% 2.5 V 2.5V R L V DS (ON) 90% 10 s V DD (c) V OUT V = -10 V 10% DD V DD R = 4.7 G t t r f Duty 1% V : t , t < 5 ns IN r f t t on off Common Source Ta = 25 C Marking Equivalent Circuit (top view) 6 5 4 6 5 4 Q1 PJ Q2 1 2 3 123 Precaution V can be expressed as the voltage between the gate and source when the low operating current value is I = -1mA th D for this product. For normal switching operation, V requires a higher voltage than V and V requires a GS (on) th GS (off) lower voltage than V . (The relationship can be established as follows: V < V < V ) th GS (off) th GS (on). Be sure to take this into consideration when using the device. Handling Precaution When handling individual devices (which are not yet mounted on a circuit board), ensure that the environment is protected against static electricity. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials. 2 2014-03-01 R G