TJ20A10M3 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSVI) TJ20A10M3 Swiching Regulator Applications Low drain-source ON resistance: R = 63 m (typ.) DS (ON) Unit: mm High forward transfer admittance: Y = 50 S (typ.) fs Low leakage current: I = 10 A (max) (V = 100 V) DSS DS Enhancement-model: V = 2.0 to 4.0 V (V = 10 V, I = 1 mA) th DS D Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Drain-source voltage V 100 V DSS Drain-gate voltage (R = 20 k) V 100 V GS DGR Gate-source voltage V 20 V GSS DC (Note 1) I 20 D Drain current A Pulse (Note 1) I 40 DP Drain power dissipation (Tc = 25C) P 35 W D Single pulse avalanche energy 1: Gate E 124 mJ AS (Note 2) 2: Drain 3: Source Avalanche current I 20 A AS Repetitive avalanche energy (Note 3) E 2.29 mJ AR JEDEC Channel temperature T 150 C ch JEITA SC-67 Storage temperature range T 55 to 150 C stg TOSHIBA 2-10U1B Note: Using continuously under heavy loads (e.g. the application of Weight: 1.7 g (typ.) high temperature/current/voltage and the significant change in temperature, etc.) may cause this produc tto decrease in the reliability significantly even if the operating condition s(i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability dat(ai.e . reliability test report and estimated failure rate, etc). Note 1: Please use devices on condition that the channel temperature is below 150C. Note 2: VDD = 25 V, Tch = 25C, L = 500 H, RG = 25 , IAS = 20 A Note 3: Repetitive rating pulse width limited by maximum channel temperature. Thermal Characteristics 2 Characteristics Symbol Max Unit 1 Thermal resistance, channel to case R 3.57 C / W th (chc) Thermal resistance, channel to R 62.5 C / W th (cha) ambient 3 Start of commercial production This transistor is an electrostatic sensitive device. Please handle with caution. 2009-03 1 2018-06-01 TJ20A10M3 Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current I V = 20 V, V = 0 V 100 nA GSS GS DS Drain cut-OFF current I V = 100 V, V = 0 V 10 A DSS DS GS V I = 10 mA, V = 0 V 100 (BR) DSS D GS Drain-source breakdown voltage V V I = 10 mA, V = 20 V 75 (BR) DSX D GS Gate threshold voltage V V = 10 V, I = 1 mA 2.0 4.0 V th DS D Drain-source ON resistance R V = 10 V, I = 10 A 63 90 m DS (ON) GS D Forward transfer admittance Y V = 10 V, I = 10 A 25 50 S fs DS D Input capacitance C 5500 iss Reverse transfer capacitance C V = 10V, V = 0 V, f = 1 MHz 200 pF rss DS GS Output capacitance C 290 oss Rise time t 13 r 0 V I = 10 A D V V GS OUT 10 V Turn-on time t 27 on R = 5 L Switching time ns Fall time t 105 f V 50 V DD Duty 1%, t = 10 s w Turn-off time t 420 off Total gate charge Q 120 g (gate-source plus gate-drain) V 80 V, V = 10 V, DD GS nC Gate-source charge Q 20 gs1 I = 20 A D Gate-drain (miller) charge Q 32 gd Source-Drain Ratings and Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. Max Unit Continuous drain reverse current (Note 1) I 20 A DR Pulse drain reverse current (Note 1) IDRP 40 A Forward voltage (diode) V I = 20 A, V = 0 V 1.4 V DSF DR GS Reverse recovery time t I = 20 A, V = 0 V, 76 ns rr DR GS dI /dt = 50 A/s Reverse recovery charge Q DR 104 nC rr Marking Note 4: A line under a Lot No. identifies the indication of product Labels Not underlined: Pb /INCLUDES > MCV Underlined: G /RoHS COMPATIBLE or G /RoHS Pb Part No. (or abbreviation code) Please contact your TOSHIBA sales representative for details as to J 2 0A 10 M environmental matters such as the RoHS compatibility of Product. Lot No. 3 The RoHS is Directive 2011/65/EU of the European Parliament and of the Council of 8 June 2011 on the restriction of the use of certain Note 4 hazardous substances in electrical and electronic equipment. 2 2018-06-01 4.7