X-On Electronics has gained recognition as a prominent supplier of TK16G60W5,RVQ MOSFETs across the USA, India, Europe, Australia, and various other global locations. TK16G60W5,RVQ MOSFETs are a product manufactured by Toshiba. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

TK16G60W5,RVQ Toshiba

TK16G60W5,RVQ electronic component of Toshiba
TK16G60W5,RVQ Toshiba
TK16G60W5,RVQ MOSFETs
TK16G60W5,RVQ  Semiconductors

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See Product Specifications
Part No. TK16G60W5,RVQ
Manufacturer: Toshiba
Category: MOSFETs
Description: MOSFET PWR MOSFET PD=130W F=1MHZ
Datasheet: TK16G60W5,RVQ Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 4.1953 ea
Line Total: USD 4.2 
Availability - 970
Ship by Mon. 14 Apr to Wed. 16 Apr
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
970
Ship by Mon. 14 Apr to Wed. 16 Apr
MOQ : 1
Multiples : 1
1 : USD 4.1953
10 : USD 2.6584
100 : USD 1.9895
500 : USD 1.9364
1000 : USD 1.8406

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Series
Transistor Type
Brand
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the TK16G60W5,RVQ from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TK16G60W5,RVQ and other electronic components in the MOSFETs category and beyond.

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TK16G60W5 MOSFETs Silicon N-Channel MOS (DTMOS) TK16G60W5TK16G60W5TK16G60W5TK16G60W5 1. 1. 1. 1. ApplicationsApplicationsApplicationsApplications Switching Voltage Regulators 2. 2. FeaturesFeatures 2. 2. FeaturesFeatures (1) Fast reverse recovery time: t = 100 ns (typ.) rr (2) Low drain-source on-resistance: R = 0.18 (typ.) DS(ON) by used to Super Junction Structure : DTMOS (3) Easy to control Gate switching (4) Enhancement mode: V = 3 to 4.5 V (V = 10 V, I = 0.79 mA) th DS D 3. 3. 3. 3. Packaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal Circuit 1: Gate 2: Drain (Heatsink) 3: Source D2PAK 4. 4. 4. 4. Absolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (T = 25 = 25 = 25 = 25 unless otherwise specified) unless otherwise specified) unless otherwise specified) unless otherwise specified) aaaa Characteristics Symbol Rating Unit Drain-source voltage V 600 V DSS Gate-source voltage V 30 GSS Drain current (DC) (Note 1) I 15.8 A D Drain current (pulsed) (Note 1) I 63.2 DP Power dissipation (T = 25) P 130 W c D Single-pulse avalanche energy (Note 2) E 194 mJ AS Avalanche current I 4.0 A AR Reverse drain current (DC) (Note 1) I 15.8 DR Reverse drain current (pulsed) (Note 1) I 63.2 DRP Channel temperature T 150 ch Storage temperature T -55 to 150 stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Start of commercial production 2013-10 2014-02-25 1 Rev.2.0TK16G60W5 5. 5. 5. 5. Thermal CharacteristicsThermal CharacteristicsThermal CharacteristicsThermal Characteristics Characteristics Symbol Max Unit Channel-to-case thermal resistance R 0.962 /W th(ch-c) Note 1: Ensure that the channel temperature does not exceed 150 . Note 2: V = 90 V, T = 25 (initial), L = 21.2 mH, R = 25 , I = 4.0 A DD ch G AR Note: This transistor is sensitive to electrostatic discharge and should be handled with care. 2014-02-25 2 Rev.2.0

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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