X-On Electronics has gained recognition as a prominent supplier of TK16G60W,RVQ MOSFETs across the USA, India, Europe, Australia, and various other global locations. TK16G60W,RVQ MOSFETs are a product manufactured by Toshiba. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

TK16G60W,RVQ Toshiba

TK16G60W,RVQ electronic component of Toshiba
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Part No.TK16G60W,RVQ
Manufacturer: Toshiba
Category: MOSFETs
Description: Toshiba MOSFET DTMOSIV 600V 190mOhm 15.8A 130W 1350pF
Datasheet: TK16G60W,RVQ Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1000: USD 3.8007 ea
Line Total: USD 3800.7 
Availability - 0
MOQ: 1000  Multiples: 1000
Pack Size: 1000
Availability Price Quantity
0
Ship by Fri. 08 Nov to Thu. 14 Nov
MOQ : 1
Multiples : 1
1 : USD 7.9125
10 : USD 6.8304
100 : USD 5.5961
500 : USD 4.7638

0
Ship by Fri. 08 Nov to Thu. 14 Nov
MOQ : 1000
Multiples : 1000
1000 : USD 4.1851
2000 : USD 3.8168

0
Ship by Fri. 08 Nov to Thu. 14 Nov
MOQ : 1
Multiples : 1
1 : USD 7.9125
10 : USD 6.8304
100 : USD 5.5961
500 : USD 4.7638

0
Ship by Fri. 08 Nov to Thu. 14 Nov
MOQ : 1000
Multiples : 1000
1000 : USD 3.8007

0
Ship by Thu. 14 Nov to Mon. 18 Nov
MOQ : 1
Multiples : 1
1 : USD 6.3362
10 : USD 3.8692
100 : USD 3.7153
250 : USD 3.5613
500 : USD 3.2021
1000 : USD 2.6582
2000 : USD 2.6582
5000 : USD 2.6274
10000 : USD 2.5453

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Tradename
Configuration
Series
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Height
Length
Transistor Type
Width
Cnhts
Hts Code
Mxhts
Product Type
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the TK16G60W,RVQ from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TK16G60W,RVQ and other electronic components in the MOSFETs category and beyond.

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TK16G60W MOSFETs Silicon N-Channel MOS (DTMOS) TK16G60WTK16G60WTK16G60WTK16G60W 1. 1. 1. 1. ApplicationsApplicationsApplicationsApplications Switching Voltage Regulators 2. 2. FeaturesFeatures 2. 2. FeaturesFeatures (1) Low drain-source on-resistance: R = 0.16 (typ.) DS(ON) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: V = 2.7 to 3.7 V (V = 10 V, I = 0.79 mA) th DS D 3. 3. 3. 3. Packaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal Circuit 1: Gate 2: Drain (Heatsink) 3: Source D2PAK Start of commercial production 2012-10 2013-12-25 1 Rev.3.0TK16G60W 4. 4. 4. 4. Absolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (T = 25 = 25 = 25 = 25 unless otherwise specified) unless otherwise specified) unless otherwise specified) unless otherwise specified) aaaa Characteristics Symbol Rating Unit Drain-source voltage V 600 V DSS Gate-source voltage V 30 GSS Drain current (DC) (Note 1) I 15.8 A D Drain current (pulsed) (Note 1) I 63.2 DP Power dissipation (T = 25) P 130 W c D Single-pulse avalanche energy (Note 2) E 194 mJ AS Avalanche current I 4.0 A AR Reverse drain current (DC) (Note 1) I 15.8 DR Reverse drain current (pulsed) (Note 1) I 63.2 DRP Channel temperature T 150 ch Storage temperature T -55 to 150 stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 5. 5. Thermal CharacteristicsThermal Characteristics 5. 5. Thermal CharacteristicsThermal Characteristics Characteristics Symbol Max Unit Channel-to-case thermal resistance R 0.962 /W th(ch-c) Note 1: Ensure that the channel temperature does not exceed 150 . Note 2: V = 90 V, T = 25 (initial), L = 21.2 mH, R = 25 , I = 4.0 A DD ch G AR Note: This transistor is sensitive to electrostatic discharge and should be handled with care. 2013-12-25 2 Rev.3.0

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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