X-On Electronics has gained recognition as a prominent supplier of TK17A80W,S4X MOSFETs across the USA, India, Europe, Australia, and various other global locations. TK17A80W,S4X MOSFETs are a product manufactured by Toshiba. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

TK17A80W,S4X Toshiba

Hot TK17A80W,S4X electronic component of Toshiba
TK17A80W,S4X Toshiba
TK17A80W,S4X MOSFETs
TK17A80W,S4X  Semiconductors

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Part No. TK17A80W,S4X
Manufacturer: Toshiba
Category: MOSFETs
Description: MOSFET N-Ch 800V 2050pF 32nC 17A 45W
Datasheet: TK17A80W,S4X Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 2.7185 ea
Line Total: USD 2.72 
Availability - 319
Ship by Fri. 14 Feb to Wed. 19 Feb
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
319
Ship by Fri. 14 Feb to Wed. 19 Feb
MOQ : 1
Multiples : 1
1 : USD 2.7185
10 : USD 1.995
50 : USD 1.6063
100 : USD 1.4113
500 : USD 1.3252
1000 : USD 1.2876

297
Ship by Wed. 05 Feb to Fri. 07 Feb
MOQ : 1
Multiples : 1
1 : USD 4.5375
10 : USD 3.894
25 : USD 3.883
50 : USD 2.288
100 : USD 2.244
500 : USD 1.958
1000 : USD 1.892

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Maximum Operating Temperature
Pd - Power Dissipation
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Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
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Series
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Configuration
Height
Length
Transistor Type
Width
Cnhts
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Hts Code
Mxhts
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We are delighted to provide the TK17A80W,S4X from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TK17A80W,S4X and other electronic components in the MOSFETs category and beyond.

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TK17A80W MOSFETs Silicon N-Channel MOS (DTMOS) TK17A80WTK17A80WTK17A80WTK17A80W 1. 1. ApplicationsApplications 1. 1. ApplicationsApplications Switching Voltage Regulators 2. 2. 2. 2. FeaturesFeaturesFeaturesFeatures (1) Low drain-source on-resistance: R = 0.25 (typ.) DS(ON) by using Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: V = 3.0 to 4.0 V (V = 10 V, I = 0.85mA) th DS D 3. 3. Packaging and Internal CircuitPackaging and Internal Circuit 3. 3. Packaging and Internal CircuitPackaging and Internal Circuit 1: Gate 2: Drain 3: Source TO-220SIS 4. 4. 4. 4. Absolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (T = 25 = 25 = 25 = 25 unless otherwise specified) unless otherwise specified) unless otherwise specified) unless otherwise specified) aaaa Characteristics Symbol Rating Unit Drain-source voltage V 800 V DSS Gate-source voltage V 20 GSS Drain current (DC) (Note 1) I 17 A D Drain current (pulsed) (Note 1) I 68 DP Power dissipation (T = 25) P 45 W c D Single-pulse avalanche energy (Note 2) E 475 mJ AS Single-pulse avalanche current I 3.4 A AS Reverse drain current (DC) (Note 1) I 17 DR Reverse drain current (pulsed) (Note 1) I 68 DRP Channel temperature T 150 ch Storage temperature T -55 to 150 stg Isolation voltage (RMS) (t = 1.0 s) V 2000 V ISO(RMS) Mounting torque TOR 0.6 Nm Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Start of commercial production 2015-07 2016 Toshiba Corporation 2016-02-05 1 Rev.5.0TK17A80W 5. 5. 5. 5. Thermal CharacteristicsThermal CharacteristicsThermal CharacteristicsThermal Characteristics Characteristics Symbol Max Unit Channel-to-case thermal resistance R 2.78 /W th(ch-c) Channel-to-ambient thermal resistance R 62.5 th(ch-a) Note 1: Ensure that the channel temperature does not exceed 150 . Note 2: V = 90 V, T = 25 (initial), L = 74.5 mH, R = 25 , I = 3.4 A DD ch G AS Note: This transistor is sensitive to electrostatic discharge and should be handled with care. 2016 Toshiba Corporation 2016-02-05 2 Rev.5.0

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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