X-On Electronics has gained recognition as a prominent supplier of TK17E80W,S1X MOSFETs across the USA, India, Europe, Australia, and various other global locations. TK17E80W,S1X MOSFETs are a product manufactured by Toshiba. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

TK17E80W,S1X Toshiba

TK17E80W,S1X electronic component of Toshiba
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Part No.TK17E80W,S1X
Manufacturer: Toshiba
Category: MOSFETs
Description: MOSFET N-Ch 800V 2050pF 32nC 17A 180W
Datasheet: TK17E80W,S1X Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
50: USD 3.7241 ea
Line Total: USD 186.2 
Availability - 0
MOQ: 50  Multiples: 50
Pack Size: 50
Availability Price Quantity
0
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ : 50
Multiples : 1
50 : USD 3.7233
100 : USD 3.7057
250 : USD 3.6881
500 : USD 3.6704
1000 : USD 3.6529
2500 : USD 3.6352
3000 : USD 3.6163
5000 : USD 3.5987
10000 : USD 3.5798

0
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ : 50
Multiples : 50
50 : USD 3.7241
100 : USD 3.5228
200 : USD 3.3215
300 : USD 3.1201
400 : USD 2.9188

0
Ship by Thu. 26 Dec to Mon. 30 Dec
MOQ : 1
Multiples : 1
1 : USD 4.9663
10 : USD 3.9415
100 : USD 3.2729
500 : USD 2.8266
1000 : USD 2.4212
2500 : USD 2.4212
5000 : USD 2.4212
10000 : USD 2.4212

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Series
Transistor Type
Brand
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Cnhts
Hts Code
Mxhts
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We are delighted to provide the TK17E80W,S1X from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TK17E80W,S1X and other electronic components in the MOSFETs category and beyond.

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TK17E80W MOSFETs Silicon N-Channel MOS (DTMOS) TK17E80WTK17E80WTK17E80WTK17E80W 1. 1. ApplicationsApplications 1. 1. ApplicationsApplications Switching Voltage Regulators 2. 2. 2. 2. FeaturesFeaturesFeaturesFeatures (1) Low drain-source on-resistance: R = 0.25 (typ.) DS(ON) by using Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: V = 3.0 to 4.0 V (V = 10 V, I = 0.85 mA) th DS D 3. 3. Packaging and Internal CircuitPackaging and Internal Circuit 3. 3. Packaging and Internal CircuitPackaging and Internal Circuit 1: Gate 2: Drain (Heatsink) 3: Source TO-220 4. 4. 4. 4. Absolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (T = 25 = 25 = 25 = 25 unless otherwise specified) unless otherwise specified) unless otherwise specified) unless otherwise specified) aaaa Characteristics Symbol Rating Unit Drain-source voltage V 800 V DSS Gate-source voltage V 20 GSS Drain current (DC) (Note 1) I 17 A D Drain current (pulsed) (Note 1) I 68 DP Power dissipation (T = 25 ) P 180 W c D Single-pulse avalanche energy (Note 2) E 418 mJ AS Single-pulse avalanche current I 3.4 A AS Reverse drain current (DC) (Note 1) I 17 DR Reverse drain current (pulsed) (Note 1) I 68 DRP Channel temperature T 150 ch Storage temperature T -55 to 150 stg Mounting torque TOR 0.6 Nm Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 2016 Toshiba Corporation 2016-02-13 1 Rev.2.0TK17E80W 5. 5. 5. 5. Thermal Characteristics Thermal Characteristics Thermal Characteristics Thermal Characteristics Characteristics Symbol Max Unit Channel-to-case thermal resistance R 0.694 /W th(ch-c) Channel-to-ambient thermal resistance R 83.3 th(ch-a) Note 1: Ensure that the channel temperature does not exceed 150 . Note 2: V = 90 V, T = 25 (initial), L = 65.6 mH, R = 25 , I = 3.4 A DD ch G AS Note: This transistor is sensitive to electrostatic discharge and should be handled with care. 2016 Toshiba Corporation 2016-02-13 2 Rev.2.0

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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