X-On Electronics has gained recognition as a prominent supplier of SSM6N35AFU,LF MOSFETs across the USA, India, Europe, Australia, and various other global locations. SSM6N35AFU,LF MOSFETs are a product manufactured by Toshiba. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SSM6N35AFU,LF Toshiba

SSM6N35AFU,LF electronic component of Toshiba
SSM6N35AFU,LF Toshiba
SSM6N35AFU,LF MOSFETs
SSM6N35AFU,LF  Semiconductors

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See Product Specifications
Part No. SSM6N35AFU,LF
Manufacturer: Toshiba
Category: MOSFETs
Description: MOSFET LowON Res MOSFET ID=.25A VDSS=20V
Datasheet: SSM6N35AFU,LF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.4438 ea
Line Total: USD 0.44 
Availability - 7226
Ship by Fri. 07 Mar to Tue. 11 Mar
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
7226
Ship by Fri. 07 Mar to Tue. 11 Mar
MOQ : 1
Multiples : 1
1 : USD 0.4438
10 : USD 0.2738
100 : USD 0.1668
500 : USD 0.1166
1000 : USD 0.1012
3000 : USD 0.088
6000 : USD 0.0836
9000 : USD 0.0715
24000 : USD 0.0704

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Series
Transistor Type
Brand
Forward Transconductance - Min
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Cnhts
Hts Code
Mxhts
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the SSM6N35AFU,LF from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SSM6N35AFU,LF and other electronic components in the MOSFETs category and beyond.

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SSM6N35AFU MOSFETs Silicon N-Channel MOS SSM6N35AFUSSM6N35AFUSSM6N35AFUSSM6N35AFU 1. 1. ApplicationsApplications 1. 1. ApplicationsApplications High-Speed Switching Analog Switches 2. 2. 2. 2. FeaturesFeaturesFeaturesFeatures (1) 1.2 V drive (2) Low drain-source on-resistance : R = 9.0 (max) ( V = 1.2 V, I = 10 mA) DS(ON) GS D R = 3.1 (max) ( V = 1.5 V, I = 20 mA) DS(ON) GS D R = 2.4 (max) ( V = 1.8 V, I = 150 mA) DS(ON) GS D R = 1.6 (max) ( V = 2.5 V, I = 150 mA) DS(ON) GS D R = 1.1 (max) ( V = 4.5 V, I = 150 mA) DS(ON) GS D 3. 3. Packaging and Pin AssignmentPackaging and Pin Assignment 3. 3. Packaging and Pin AssignmentPackaging and Pin Assignment 1: Source 1 2: Gate 1 3: Drain 2 4: Source 2 5: Gate 2 6: Drain 1 US6 Start of commercial production 2016-10 2016 Toshiba Corporation 2016-11-21 1 Rev.2.0SSM6N35AFU 4. 4. 4. 4. Absolute Maximum Ratings (Note) Absolute Maximum Ratings (Note) Absolute Maximum Ratings (Note) Absolute Maximum Ratings (Note) (Unless otherwise specified, T(Unless otherwise specified, T(Unless otherwise specified, T(Unless otherwise specified, T = 25 = 25 = 25 = 25 )(Q1, Q2 Common))(Q1, Q2 Common))(Q1, Q2 Common))(Q1, Q2 Common) aaaa Characteristics Symbol Rating Unit Drain-source voltage V 20 V DSS Gate-source voltage V 10 GSS Drain current (Note 1) I 250 mA D Drain current (pulsed) (Note 1) I 600 DP Power dissipation (Note 2) P 285 mW D Channel temperature T 150 ch Storage temperature T -55 to 150 stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Ensure that the channel temperature does not exceed 150 . Note 2: Mounted on an FR4 board (25.4 mm 25.4 mm 1.6 mm, Cu pad: 645 mm2) Note: The MOSFETs in this device are sensitive to electrostatic discharge. When handling this device, the worktables, operators, soldering irons and other objects should be protected against anti-static discharge. Note: The channel-to-ambient thermal resistance, R , and the drain power dissipation, P , vary according to th(ch-a) D the board material, board area, board thickness and pad area. When using this device, be sure to take heat dissipation fully into account. 2016 Toshiba Corporation 2016-11-21 2 Rev.2.0

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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