X-On Electronics has gained recognition as a prominent supplier of SSM6N40TU,LF MOSFETs across the USA, India, Europe, Australia, and various other global locations. SSM6N40TU,LF MOSFETs are a product manufactured by Toshiba. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SSM6N40TU,LF Toshiba

SSM6N40TU,LF electronic component of Toshiba
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Part No.SSM6N40TU,LF
Manufacturer: Toshiba
Category: MOSFETs
Description: MOSFET Small Signal MOSFET N-ch x 2 VDSS=30V VGSS=+-20V ID=1.6A RDSON=0.182Ohm @ 4V in UF6 package
Datasheet: SSM6N40TU,LF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.4653 ea
Line Total: USD 0.47 
Availability - 2810
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2810
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 0.4653
10 : USD 0.3003
100 : USD 0.1991
500 : USD 0.1573
1000 : USD 0.1441
3000 : USD 0.1166
9000 : USD 0.1078

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Series
Transistor Type
Brand
Product Type
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the SSM6N40TU,LF from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SSM6N40TU,LF and other electronic components in the MOSFETs category and beyond.

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SSM6N40TU TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type SSM6N40TU Power Management Switch Applications Unit: mm 2.10.1 High-Speed Switching Applications 1.70.1 4 V drive N-ch 2-in-1 1 6 Low ON-resistance: R = 182m (max) ( V = 4 V) on GS 2 5 R = 122m (max) ( V = 10 V) on GS 3 4 Absolute Maximum Ratings (Ta = 25 C) (Q1, Q2 Common) Characteristic Symbol Rating Unit Drain-source voltage V 30 V DSS Gate-source voltage V 20 V GSS DC I 1.6 D 1.Source1 4.Source2 Drain current A 2.Gate1 5.Gate2 Pulse I 3.2 DP 3.Drain2 6.Drain1 Drain power dissipation P (Note1) 500 mW UF6 D Channel temperature T 150 C ch JEDEC Storage temperature range T 55 to 150 C stg JEITA Note: Using continuously under heavy loads (e.g. the application of high TOSHIBA 2-2T1B temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the Weight: 7.0mg (typ.) reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note1: Mounted on an FR4 board. (total dissipation) 2 (25.4 mm 25.4 mm 1.6 mm, Cu Pad : 645 mm ) Start of commercial production 2008-01 1 2014-03-01 2.00.1 1.30.1 0.70.05 0.65 0.65 0.1660.05 +0.1 0.3-0.05SSM6N40TU Electrical Characteristics (Ta = 25C) (Q1,Q2 Common) Characteristics Symbol Test Conditions Min Typ. Max Unit V I = 1 mA, V = 0 V 30 (BR) DSS D GS Drain-source breakdown voltage V V I = 1 mA, V = -20 V 15 (BR) DSX D GS Drain cutoff current I V =30 V, V = 0 V 1 A DSS DS GS Gate leakage current I V = 16 V, V = 0 V 1 A GSS GS DS Gate threshold voltage V V = 5 V, I = 1 mA 1.0 2.6 V th DS D Forward transfer admittance Y V = 5 V, I = 1A (Note 2) 1.9 3.7 S fs DS D I = 1 A, V = 10 V (Note 2) 96 122 D GS Drain-source ON-resistance R m DS (ON) I = 0.5 A, V = 4 V (Note 2) 130 182 D GS Input capacitance C 180 iss Output capacitance C V = 15 V, V = 0 V, f = 1 MHz 34 pF oss DS GS Reverse transfer capacitance C 27 rss Total Gate Charge Q 5.1 g V = 15 V, I = 1.6 A, V = 10 V nC GateSource Charge Q 3.9 gs DS D GS GateDrain Charge Q 1.2 gd Turn-on time t 9.5 on V = 15 V, I = 0.5 A DD D Switching time ns V = 0 to 4 V, R = 10 GS G Turn-off time t 9.0 off Drain-source forward voltage V I = -1.6 A, V = 0 V (Note 2) -0.8 -1.2 V DSF D GS Note 2: Pulse test Switching Time Test Circuit (a) Test Circuit (b) V IN 4 V 90% OUT 4 V IN 10% 0 V 0 V DD (c) V 10 s OUT 10% V DD 90% V = 15 V DD V DS (ON) R = 10 t t G f r Duty 1% t t V : t , t < 5 ns on off IN r f Common Source Ta = 25C Marking Equivalent Circuit (top view) 6 4 5 465 Q1 Q2 NN2 1 2 3 123 2 2014-03-01 R G

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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