SSM6N40TU TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type SSM6N40TU Power Management Switch Applications Unit: mm 2.10.1 High-Speed Switching Applications 1.70.1 4 V drive N-ch 2-in-1 1 6 Low ON-resistance: R = 182m (max) ( V = 4 V) on GS 2 5 R = 122m (max) ( V = 10 V) on GS 3 4 Absolute Maximum Ratings (Ta = 25 C) (Q1, Q2 Common) Characteristic Symbol Rating Unit Drain-source voltage V 30 V DSS Gate-source voltage V 20 V GSS DC I 1.6 D 1.Source1 4.Source2 Drain current A 2.Gate1 5.Gate2 Pulse I 3.2 DP 3.Drain2 6.Drain1 Drain power dissipation P (Note1) 500 mW UF6 D Channel temperature T 150 C ch JEDEC Storage temperature range T 55 to 150 C stg JEITA Note: Using continuously under heavy loads (e.g. the application of high TOSHIBA 2-2T1B temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the Weight: 7.0mg (typ.) reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note1: Mounted on an FR4 board. (total dissipation) 2 (25.4 mm 25.4 mm 1.6 mm, Cu Pad : 645 mm ) Start of commercial production 2008-01 1 2014-03-01 2.00.1 1.30.1 0.70.05 0.65 0.65 0.1660.05 +0.1 0.3-0.05SSM6N40TU Electrical Characteristics (Ta = 25C) (Q1,Q2 Common) Characteristics Symbol Test Conditions Min Typ. Max Unit V I = 1 mA, V = 0 V 30 (BR) DSS D GS Drain-source breakdown voltage V V I = 1 mA, V = -20 V 15 (BR) DSX D GS Drain cutoff current I V =30 V, V = 0 V 1 A DSS DS GS Gate leakage current I V = 16 V, V = 0 V 1 A GSS GS DS Gate threshold voltage V V = 5 V, I = 1 mA 1.0 2.6 V th DS D Forward transfer admittance Y V = 5 V, I = 1A (Note 2) 1.9 3.7 S fs DS D I = 1 A, V = 10 V (Note 2) 96 122 D GS Drain-source ON-resistance R m DS (ON) I = 0.5 A, V = 4 V (Note 2) 130 182 D GS Input capacitance C 180 iss Output capacitance C V = 15 V, V = 0 V, f = 1 MHz 34 pF oss DS GS Reverse transfer capacitance C 27 rss Total Gate Charge Q 5.1 g V = 15 V, I = 1.6 A, V = 10 V nC GateSource Charge Q 3.9 gs DS D GS GateDrain Charge Q 1.2 gd Turn-on time t 9.5 on V = 15 V, I = 0.5 A DD D Switching time ns V = 0 to 4 V, R = 10 GS G Turn-off time t 9.0 off Drain-source forward voltage V I = -1.6 A, V = 0 V (Note 2) -0.8 -1.2 V DSF D GS Note 2: Pulse test Switching Time Test Circuit (a) Test Circuit (b) V IN 4 V 90% OUT 4 V IN 10% 0 V 0 V DD (c) V 10 s OUT 10% V DD 90% V = 15 V DD V DS (ON) R = 10 t t G f r Duty 1% t t V : t , t < 5 ns on off IN r f Common Source Ta = 25C Marking Equivalent Circuit (top view) 6 4 5 465 Q1 Q2 NN2 1 2 3 123 2 2014-03-01 R G