SSM6N37FE TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM6N37FE High-Speed Switching Applications : mm Analog Switching Applications 1.60.05 1.20.05 1.5-V drive Suitable for high-density mounting due to compact package Low ON-resistance R = 5.60 (max) ( V = 1.5 V) 1 6 DS(ON) GS R = 4.05 (max) ( V = 1.8 V) DS(ON) GS R = 3.02 (max) ( V = 2.5 V) 2 5 DS(ON) GS R = 2.20 (max) ( V = 4.5 V) DS(ON) GS 3 4 Absolute Maximum Ratings (Ta = 25C) (Q1, Q2 Common) Characteristic Symbol Rating Unit Drainsource voltage V 20 V 1.Source1 4.Source2 DSS 2.Gate1 5.Gate2 Gatesource voltage V 10 V GSS 3.Drain2 6.Drain1 ES6 DC I 250 D Drain current mA Pulse I 500 DP JEDEC Drain power dissipation P (Note 1) 150 mW D JEITA Channel temperature T 150 C ch TOSHIBA 2-2N1D Storage temperature T 55 to 150 C stg Weight: 3.0 mg (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Total rating Mounted on an FR4 board 2 (25.4 mm 25.4 mm 1.6 mm, Cu Pad: 0.135 mm 6) Marking Equivalent Circuit (top view) 6 5 4 65 4 Q1 Q2 S U 1 2 3 12 3 Start of commercial production 2009-12 1 2014-03-01 1.60.05 0.550.05 1.00.05 0.5 0.5 0.120.05 0.20.05SSM6N37FE Electrical Characteristics (Ta = 25C) (Q1, Q2 Common) Characteristic Symbol Test Condition Min Typ. Max Unit V I = 1 mA, V = 0 V 20 (BR) DSS D GS Drain-source breakdown voltage V V I = 1 mA, V = -10 V 12 (BR) DSX D GS Drain cutoff current I V = 20 V, V = 0 V 1 A DSS DS GS Gate leakage current I V = 10 V, V = 0 V 1 A GSS GS DS Gate threshold voltage V V = 3 V, I = 1 mA 0.35 1.0 V th DS D Forward transfer admittance Y V = 3 V, I = 100 mA (Note 2) 0.14 0.28 S fs DS D I = 100 mA, V = 4.5 V (Note 2) 1.65 2.20 D GS I = 50 mA, V = 2.5 V (Note 2) 2.16 3.02 D GS Drain-source ON-resistance R DS (ON) I = 20 mA, V = 1.8 V (Note 2) 2.66 4.05 D GS I = 10 mA, V = 1.5 V (Note 2) 3.07 5.60 D GS Input capacitance C 12 iss Output capacitance C V = 10 V, V = 0 V, f = 1 MHz 5.5 pF DS GS oss Reverse transfer capacitance C 4.1 rss Turn-on time t V = 10 V, I = 100 mA 18 on DD D Switching time ns V = 0 to 2.5 V, R = 50 Turn-off time t GS G 36 off Drain-source forward voltage V I = -250 mA, V = 0 V (Note 2) -0.9 -1.2 V DSF D GS Note 2: Pulse test Switching Time Test Circuit (Q1, Q2 Common) (a) Test Circuit (b) V IN 2.5 V 90% V = 10 V DD 2.5 V OUT R = 50 G 10% IN 0 V Duty 1% 0 V : t , t < 5 ns IN r f V DD Common Source (c) V 90% OUT 10 s Ta = 25C 10% V DD V DS (ON) t t r f t t on off Precaution Let V be the voltage applied between gate and source that causes the drain current (I ) to be low (1mA for the th D SSM6N37FE). Then, for normal switching operation, V must be higher than V and V must be lower than GS(on) th, GS(off) V This relationship can be expressed as: V < V < V th. GS(off) th GS(on). Take this into consideration when using the device. Do not use this device under avalanche mode. It may cause the device to break down. Handling Precaution When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that come into direct contact with devices should be made of antistatic materials. Thermal resistance R and drain power dissipation P vary depending on board material, board area, board th(j-a) D thickness and pad area. When using this device, please take heat dissipation into consideration. 2 2014-03-01 R G