X-On Electronics has gained recognition as a prominent supplier of SSM6P49NU,LF MOSFETs across the USA, India, Europe, Australia, and various other global locations. SSM6P49NU,LF MOSFETs are a product manufactured by Toshiba. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SSM6P49NU,LF Toshiba

SSM6P49NU,LF electronic component of Toshiba
SSM6P49NU,LF Toshiba
SSM6P49NU,LF MOSFETs
SSM6P49NU,LF  Semiconductors

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See Product Specifications
Part No. SSM6P49NU,LF
Manufacturer: Toshiba
Category: MOSFETs
Description: Mosfet Array 2 P-Channel (Dual) 20V 4A 1W Surface Mount 6-UDFN (2x2)
Datasheet: SSM6P49NU,LF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.9934 ea
Line Total: USD 0.99 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Wed. 30 Apr to Tue. 06 May
MOQ : 3000
Multiples : 3000
3000 : USD 0.1832
6000 : USD 0.1814
9000 : USD 0.1796
12000 : USD 0.1778
15000 : USD 0.176
24000 : USD 0.1743
30000 : USD 0.1725
75000 : USD 0.1707
150000 : USD 0.169

0
Ship by Wed. 30 Apr to Tue. 06 May
MOQ : 3000
Multiples : 3000
3000 : USD 0.1886
6000 : USD 0.1694
15000 : USD 0.1577
30000 : USD 0.1496
75000 : USD 0.148

0
Ship by Wed. 30 Apr to Tue. 06 May
MOQ : 1
Multiples : 1
1 : USD 0.5396
10 : USD 0.4381
100 : USD 0.3271
500 : USD 0.257
1000 : USD 0.1986

0
Ship by Wed. 30 Apr to Tue. 06 May
MOQ : 1
Multiples : 1
1 : USD 0.5396
10 : USD 0.4381
100 : USD 0.3271
500 : USD 0.257
1000 : USD 0.1986

0
Ship by Mon. 28 Apr to Wed. 30 Apr
MOQ : 1
Multiples : 1
1 : USD 0.9934
10 : USD 0.8653
100 : USD 0.2593
500 : USD 0.2081
1000 : USD 0.1652
3000 : USD 0.1527
6000 : USD 0.1443
9000 : USD 0.1328
24000 : USD 0.1297

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Factory Pack Quantity :
Configuration
Height
Length
Series
Transistor Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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We are delighted to provide the SSM6P49NU,LF from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SSM6P49NU,LF and other electronic components in the MOSFETs category and beyond.

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SSM6P49NU MOSFETs Silicon P-Channel MOS SSM6P49NUSSM6P49NUSSM6P49NUSSM6P49NU 1. 1. ApplicationsApplications 1. 1. ApplicationsApplications Power Management Switches 2. 2. 2. 2. FeaturesFeaturesFeaturesFeatures (1) 1.8 V drive (2) Low drain-source on-resistance : R = 157 m (max) ( V = -1.8 V) DS(ON) GS R = 76 m (max) ( V = -2.5 V) DS(ON) GS R = 56 m (max) ( V = -4.5 V) DS(ON) GS R = 45 m (max) ( V = -10 V) DS(ON) GS 3. 3. Packaging and Pin AssignmentPackaging and Pin Assignment 3. 3. Packaging and Pin AssignmentPackaging and Pin Assignment 1: Source 1 2: Gate 1 3: Drain 2 4: Source 2 5: Gate 2 6: Drain 1 UDFN6 Start of commercial production 2010-11 2016 Toshiba Corporation 2016-10-05 1 Rev.1.0SSM6P49NU 4. 4. 4. 4. Absolute Maximum Ratings (Note)Absolute Maximum Ratings (Note)Absolute Maximum Ratings (Note)Absolute Maximum Ratings (Note) (Unless otherwise specified, T(Unless otherwise specified, T(Unless otherwise specified, T(Unless otherwise specified, T = 25 = 25 = 25 = 25 )(Q1, Q2 Common))(Q1, Q2 Common))(Q1, Q2 Common))(Q1, Q2 Common) aaaa Characteristics Symbol Rating Unit Drain-source voltage V -20 V DSS Gate-source voltage V 12 GSS Drain current (DC) (Note 1) I -4 A D Drain current (pulsed) (Note 1), (Note 2) I -16 DP Power dissipation (Note 3) P 1 W D Power dissipation (t 10 s) (Note 3) 2 Channel temperature T 150 ch Storage temperature T -55 to 150 stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Ensure that the channel temperature does not exceed 150 . Note 2: Pulse width (PW) 100 s, duty 1 % Note 3: Device mounted on a FR4 board. (25.4 mm 25.4 mm 1.6 mm, Cu pad: 645 mm2) Note: This transistor is sensitive to electrostatic discharge and should be handled with care. Note: The MOSFETs in this device are sensitive to electrostatic discharge. When handling this device, the worktables, operators, soldering irons and other objects should be protected against anti-static discharge. Note: The channel-to-ambient thermal resistance, R , and the drain power dissipation, P , vary according to th(ch-a) D the board material, board area, board thickness and pad area. When using this device, be sure to take heat dissipation fully into account. 2016 Toshiba Corporation 2016-10-05 2 Rev.1.0

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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