ON Semiconductor Is Now To learn more about onsemi, please visit our website at www.onsemi.com onsemi andand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided as-is and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. Typical parameters which may be provided in onsemi data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdo nsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. FCD900N60Z N-Channel SuperFET II MOSFET FCD900N60Z N-Channel SuperFET II MOSFET 600 V, 4.5 A, 900 m Features 650 V T = 150C J Typ. R = 820 m Description DS(on) Ultra Low Gate Charge (Typ. Q = 13 nC) g SuperFET II MOSFET is ON Semiconductors brand-new high voltage super-junction (SJ) MOSFET family that is utilizing Low Effective Output Capacitance (Typ. C = 49 pF) oss(eff.) charge balance technology for outstanding low on-resistance 100% Avalanche Tested and lower gate charge performance. This technology is tailored ESD Improved Capacity to minimize conduction loss, provide superior switching perfor- RoHS Compliant mance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power Applications applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. LCD / LED / PDP TV and Monitor Lighting Solar Inverter Charger D D G S D-PAK G o Absolute Maximum Ratings T = 25 C unless otherwise noted. C S Symbol Parameter FCD900N60Z Unit V Drain to Source Voltage 600 V DSS - DC 20 V V Gate to Source Voltage GSS - AC (f > 1Hz) 30 V o - Continuous (T = 25 C) 4.5 C I Drain Current A D o - Continuous (T = 100 C) 3.5 C I Drain Current - Pulsed (Note 1) 13.5 A DM E Single Pulsed Avalanche Energy (Note 2) 47.5 mJ AS I Avalanche Current (Note 1) 1 A AR E Repetitive Avalanche Energy (Note 1) 0.52 mJ AR MOSFET dv/dt 100 dv/dt V/ns Peak Diode Recovery dv/dt (Note 3) 20 o (T = 25 C) 52 W C P Power Dissipation D o o - Derate Above 25C0.42W/ C o T , T Operating and Storage Temperature Range -55 to +150 C J STG o Maximum Lead Temperature for Soldering, 1/8 from Case for 5 Seconds T 300 C L Thermal Characteristics Symbol Parameter FCD900N60Z Unit o R Thermal Resistance, Junction to Case, Max. 2.4 C/W JC o R Thermal Resistance, Junction to Ambient, Max. 100 C/W JA Publication Order Number: 2012 Semiconductor Components Industries, LLC. FCD900N60Z/D October-2017,Rev.3