MOSFET N-Channel, SUPERFET II, FRFET 650 V, 76 A, 41 m FCH041N65F Description www.onsemi.com SUPERFET II MOSFET is ON Semiconductors brand new high voltage superjunction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate V R MAX I MAX charge performance. This technology is tailored to minimize DS DS(ON) D conduction loss, provide superior switching performance, dv/dt rate 650 V 41 m 10 V 76 A and higher avalanche energy. Consequently, SUPERFET II MOSFET is very suitable for the switching power applications such as PFC, D server/telecom power, FPD TV power, ATX power and industrial power applications. SUPERFET II FRFET MOSFETs optimized body diode reverse recovery performance can remove additional component and improve system reliability. G Features 700 V T = 150C J Typ. R = 36 m S DS(on)) Ultra Low Gate Charge (Typ. Q = 226 nC) N-CHANNEL MOSFET g Low Effective Output Capacitance (Typ. C = 1278 pF) oss(eff.) S 100% Avalanche Tested D GG This Device is PbFree and is RoHS Compliant Applications LCD, LED, PDP TV TO2473LD Solar Inverter CASE 340CH Telecom, Server Power Supplies ACDC Power Supply MARKING DIAGRAM Y&Z&3&K FCH 041N65F Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Numeric Date Code &K = Lot Code FCH041N65F = Specific Device Code ORDERINGORDERING INFORMA INFORMATIONTION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2014 1 Publication Order Number: September, 2020 Rev. 4 FCH041N65F/DFCH041N65F ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) C Symbol Parameter FCH041N65FF155 Unit V Drain to Source Voltage 650 V DSS V Gate to Source Voltage DC 20 V GSS AC (f > 1 Hz) 30 I Drain Current Continuous (T = 25C) 76 A D C Continuous (T = 100C) 48.1 C I Drain Current Pulsed (Note 1) 228 A DM E Single Pulsed Avalanche Energy (Note 2) 2025 mJ AS I Avalanche Current (Note 1) 15 A AR E Repetitive Avalanche Energy (Note 1) 5.95 mJ AR dv/dt MOSFET dv/dt 100 V/ns Peak Diode Recovery dv/dt (Note 3) 50 P Power Dissipation (T = 25C) 595 W D C Derate Above 25C 4.76 W/C T , T Operating and Storage Temperature Range 55 to + 150 C J STG T Maximum Lead Temperature for Soldering, from Case for 5 Seconds 300 C L Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. I = 15 A, R = 25 , Starting T = 25C AS G J 3. I 38 A, di/dt 200 A/ s, V 380 V, Starting T = 25 C. SD DD J PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity FCH041N65FF155 FCH041N65F TO2473LD Tube N/A N/A 30 Units THERMAL CHARACTERISTICS Symbol Parameter FCH041N65FF155 Unit R Thermal Resistance, Junction to Case, Max. 0.21 C/W JC R Thermal Resistance, Junction to Ambient, Max. 40 JA www.onsemi.com 2