Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductors product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. Typical parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. FCH067N65S3 N-Channel SuperFET III MOSFET www.onsemi.com FCH067N65S3 N-Channel SuperFET III MOSFET 650 V, 44 A, 67 m Features Description o 700 V T = 150 C SuperFET III MOSFET is ON Semiconductors brand-new J high voltage super-junction (SJ) MOSFET family that is utilizing Typ. R = 59 m DS(on) charge balance technology for outstanding low on-resistance Ultra Low Gate Charge (Typ. Q = 78 nC) g and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switch- Low Effective Output Capacitance (Typ. C = 715 pF) oss(eff.) ing performance, and withstand extreme dv/dt rate. Conse- 100% Avalanche Tested quently, SuperFET III MOSFET is very suitable for various RoHS Compliant power system for miniaturization and higher efficiency. Applications Telecom / Sever Power Supplies Industrial Power Supplies UPS / Solar D G G TO-247 D S long leads S o Absolute Maximum Ratings T = 25 C unless otherwise noted. C Symbol Parameter FCH067N65S3 F155 Unit V Drain to Source Voltage 650 V DSS - DC 30 V Gate to Source Voltage V GSS - AC (f>1 Hz) 30 o - Continuous (T = 25 C) 44* C I Drain Current A D o - Continuous (T = 100 C) 28* C I Drain Current - Pulsed (Note 1) 110* A DM E Single Pulsed Avalanche Energy (Note 2) 1160 mJ AS I Avalanche Current (Note 1) 8.8 A AS E Repetitive Avalanche Energy (Note 1) 3.12 mJ AR MOSFET dv/dt 100 dv/dt V/ns Peak Diode Recovery dv/dt (Note 3) 20 o (T = 25 C) 312 W C P Power Dissipation D o o - Derate Above 25C2.5W/ C o T , T Operating and Storage Temperature Range -55 to +150 C J STG o Maximum Lead Temperature for Soldering, 1/8 from Case for 5 Seconds T 300 C L *Drain current limited by maximum junction temperature. Thermal Characteristics Symbol Parameter FCH067N65S3 F155 Unit R Thermal Resistance, Junction to Case, Max. 0.4 JC o C/W R Thermal Resistance, Junction to Ambient, Max. 40 JA Semiconductor Components Industries, LLC, 2017 Publication Order Number: March, 2017, Rev. 1.6 FCH067N65S3/D 1