X-On Electronics has gained recognition as a prominent supplier of FCH072N60 MOSFETs across the USA, India, Europe, Australia, and various other global locations. FCH072N60 MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

FCH072N60 ON Semiconductor

FCH072N60 electronic component of ON Semiconductor
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See Product Specifications
Part No.FCH072N60
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: Fairchild Semiconductor MOSFET
Datasheet: FCH072N60 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 9.3555 ea
Line Total: USD 9.36 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Thu. 21 Nov to Wed. 27 Nov
MOQ : 450
Multiples : 30
450 : USD 8.06
1500 : USD 8.0197
3000 : USD 7.9781
6000 : USD 7.9365
9000 : USD 7.8936
12000 : USD 7.8507
15000 : USD 7.8078
24000 : USD 7.7636
30000 : USD 7.7207
75000 : USD 7.6752

0
Ship by Thu. 28 Nov to Tue. 03 Dec
MOQ : 1
Multiples : 1
1 : USD 12.5572
10 : USD 11.0383
30 : USD 10.11
90 : USD 9.3336

0
Ship by Tue. 19 Nov to Thu. 21 Nov
MOQ : 1
Multiples : 1
1 : USD 9.3555
10 : USD 6.1516
25 : USD 5.8616
100 : USD 5.0953
450 : USD 4.4221
900 : USD 4.0182

0
Ship by Tue. 19 Nov to Thu. 21 Nov
MOQ : 1
Multiples : 1
1 : USD 8.7928
3 : USD 5.9841
8 : USD 5.6583

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
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Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
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Brand
Forward Transconductance - Min
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the FCH072N60 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FCH072N60 and other electronic components in the MOSFETs category and beyond.

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MOSFET N-Channel, SUPERFET II 600 V, 52 A, 72 m FCH072N60 Description SUPERFET II MOSFET is ON Semiconductors brand new high www.onsemi.com voltage superjunction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate charge performance. This advanced technology is tailored to minimize V R MAX I MAX DS DS(ON) D conduction loss, provide superior switching performance, and 600 V 72 m 10 V 52 A withstand extreme dv/dt rate and higher avalanche energy. Consequently, SUPERFET II MOSFET is suitable for various AC/DC power conversion for system miniaturization and higher efficiency. D Features Typ. R = 66 m DS(on) 650 V T = 150C J Ultra Low Gate Charge (Typ. Q = 95 nC) G g Low Effective Output Capacitance (Typ. C = 421 pF) oss(eff.) 100% Avalanche Tested S These Devices are PbFree and are RoHS Compliant N-CHANNEL MOSFET Applications Telecom / Sever Power Supplies S D GG Industrial Power Supplies TO2473LD CASE 340CK MARKING DIAGRAM Y&Z&3&K FCH 072N60 Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Numeric Date Code &K = Lot Code FCH072N60 = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2014 1 Publication Order Number: November, 2019 Rev. 3 FCH072N60/DFCH072N60 ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) C Symbol Parameter FCH072N60 Unit V Drain to Source Voltage 600 V DSS V Gate to Source Voltage DC 20 V GSS AC (f > 1 Hz) 30 I Drain Current: Continuous (T = 25C) 52 A D C Continuous (T = 100C) 33 C I Drain Current: Pulsed (Note 1) 156 A DM E Single Pulsed Avalanche Energy (Note 2) 1128 mJ AS I Avalanche Current (Note 1) 9.5 A AR E Repetitive Avalanche Energy (Note 1) 4.8 mJ AR dv/dt MOSFET dv/dt 100 V/ns Peak Diode Recovery dv/dt (Note 3) 20 P Power Dissipation (T = 25C) 481 W D C Derate Above 25C 3.85 W/C T , T Operating and Storage Temperature Range 55 to + 150 C J STG T Maximum Lead Temperature for Soldering, 1/8 from Case for 5 seconds 300 C L Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Repetitive rating: pulsewidth limited by maximum junction temperature. 2. I = 9.5 A, R = 25 , Starting T = 25 C. AS G J 3. I 26 A, di/dt 200 A/ s, V 380 V, Starting T = 25 C. SD DD J PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Marking Package Packing Method Reel Size Tape Width Quantity FCH072N60 FCH072N60 TO247 Tube N/A N/A 30 Units THERMAL CHARACTERISTICS Symbol Parameter FCH072N60 Unit R Thermal Resistance, Junction to Case, Max. 0.26 C/W JC R Thermal Resistance, Junction to Ambient, Max. 40 JA www.onsemi.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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