MOSFET N-Channel, SUPERFET 600 V, 35 A, 98 m FCH35N60 Description www.onsemi.com SUPERFET MOSFET is ON Semiconductors first generation of high voltage superjunction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on resistance V R MAX I MAX andlower gate charge performance. This technology is tailored DS DS(ON) D to minimize conduction loss, provide superior switching performance, 600 V 98 m 10 V 35 A dv/dt rate and higher avalanche energy. Consequently, SUPERFET MOSFET is very suitable for the switching power applications D suchasPFC, server/telecom power, FPD TV power, ATX power and industrial power applications. Features 650 V T = 150C J G Typ. R = 79 m DS(on) Ultra Low Gate Charge (Typ. Q = 139 nC) g S Low Effective Output Capacitance (Typ. C = 340 pF) oss(eff.) 100% Avalanche Tested N-CHANNEL MOSFET This is a PbFree Device Applications Solar Inverter G ACDC Power Supply D S TO2473LD CASE 340CK MARKING DIAGRAM Y&Z&3&K FCH 35N60 Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Numeric Date Code &K = Lot Code FCH35N60 = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2009 1 Publication Order Number: April, 2021 Rev. 3 FCH35N60/DFCH35N60 ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) C Symbol Parameter Value Unit V Drain to Source Voltage 600 V DSS V Gate to Source Voltage 30 V GSS I Drain Current A Continuous (T = 25C) 35 D C Continuous (T = 100C) 22.2 C I Drain Current Pulsed (Note 1) 105 A DM E Single Pulsed Avalanche Energy (Note 2) 1455 mJ AS I Avalanche Current (Note 1) 35 A AR E Repetitive Avalanche Energy (Note 1) 31.25 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 20 V/ns P Power Dissipation (T = 25C) 312.5 W D C Derate above 25C 2.5 W/C T , T Operating and Storage Temperature Range 55 to + 150 C J STG T Maximum Lead Temperature for Soldering, 1/8 from Case for 5 Second 300 C L Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. I = 17.5 A, V = 50 V, R = 25 , starting T = 25C AS DD G J 3. I 35 A, di/dt 200 A/ s, V BV , starting T = 25C SD DD DSS J PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Mark Package Package Method Reel Size Tape Width Quantity FCH35N60 FCH35N60 TO2473LD Tube 30 Units THERMAL CHARACTERISTICS Symbol Parameter Value Unit R Thermal Resistance, Junction to Case, Max. 0.4 C/W JC R Thermal Resistance, Junction to Ambient, Max. 42 JA www.onsemi.com 2